Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb

Rühle, W. W.; Bimberg, D.

doi:10.1103/physrevb.12.2382

Cited by 70 publications

(11 citation statements)

References 20 publications

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“…The model of a V Ga Ga Sb complex as the dominant acceptor is in agreement with the results of thermodynamical investigations; 209 however, Zeeman experiments show that the defect has tetrahedral local symmetry and thus it seems difficult to reconcile these conclusions. 210 Both singly and doubly ionisable acceptor models have been proposed to account for the behaviour of this defect in relation to the electrical and optical properties of GaSb.…”

Section: B Native Defectsmentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

674

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: B Native Defectsmentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

674

396

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“…The both spectra exhibit a strong emission band, which is designated with A in the Fig. 1 with the maximum energy hνA = 777 meV and the several emission bands close to the GaSb energy gap, which are attributed to the bound exciton BE bands (Rühle and Bimberg, 1975). The energy maxima of these bound excitons have the following values: 805 meV (BE1); 803 meV (BE2); 801 meV (BE3); and 796 meV (BE4).…”

Section: Methodsmentioning

confidence: 93%

“…The as-grown GaSb is always p-type in nature due to the native acceptors, which are likely the complex of gallium vacancies and gallium on antimony sites (antisites) (Jakowetz et al, 1972). The photoluminescence of undoped bulk GaSb have been studied by (Benoit a la Guillaume and Lavallard, 1972;Rühle and Bimberg, 1975;Averkiev et al, 1982). The low temperature photoluminescence was dominated by recombination at the native acceptor level A via Band-Acceptor (BA) or Donor-Acceptor Pairs (DAP) transitions.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Features of GaSb Doped by Fe

Georgitse¹,

Gutzuleac

Mikhelake³

et al. 2014

JLA

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The low temperature (2K) photoluminescence of gallium antimonide doped by iron have been studied at a zero magnetic field. The samples were prepared by the float-zone method. The concentration of Fe in the melt was in the range of 0.001 -1 atomic percent. The samples had a p-type of conductivity and it was shown that the Fe in GaSb formed the shallow acceptor level with the ionization energy of 23 ± 2 meV. The concentration of shallow acceptors determined from the Hall measurements is in a good agreement with the concentration of the Fe acceptors obtained from the photoluminescence.

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“…This model is supported by thermodynamic investigations [Ichimura, (1990)]. The double defect was called into question after it was found to have tetrahedral electronic symmetry through Zeeman experiments [Ruhle, (1975)]. The defects' physical structure, however, does not necessarily have to correlate to the electronic structure.…”

Section: Instrinsic Gasb Including Gasb Grown Via the Czochralski Tementioning

confidence: 95%

Self- and zinc diffusion in gallium antimonide

Nicols

2002

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Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb

Cited by 70 publications

References 20 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Photoluminescence Features of GaSb Doped by Fe

Self- and zinc diffusion in gallium antimonide

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