Linear magnetoresistance in compensated graphene bilayer

Vasil’eva, G. Yu.; Смирнов, Д.; Ivanov, Yu. L.; Vasilyev, Yu. B.; Alekseev, P. S.; Дмитриев, А. П.; Gornyi, I. V.; Kachorovskii, V. Yu.; Titov, M.; Narozhny, B. N.; Haug, Rolf J.

doi:10.1103/physrevb.93.195430

Cited by 43 publications

(35 citation statements)

References 41 publications

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“…This qualitative derivation is in agreement with the rigorous calculation for graphene based on the three‐mode hydrodynamic model. This mechanism of linear magnetoresistance was measured in recent experiments on bilayer graphene, see Fig . .…”

Section: Signatures Of Hydrodynamic Behavior In Graphenesupporting

confidence: 59%

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Hydrodynamic Approach to Electronic Transport in Graphene

et al. 2017

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The last few years have seen an explosion of interest in hydrodynamic effects in interacting electron systems in ultra-pure materials. In this paper we briefly review the recent advances, both theoretical and experimental, in the hydrodynamic approach to electronic transport in graphene, focusing on viscous phenomena, Coulomb drag, non-local transport measurements, and possibilities for observing nonlinear effects.Hydrodynamics describes a great variety of phenomena around (and inside) us, including, e.g., the flow of water in rivers, seas, and oceans, atmospheric phenomena, aircraft motion, the flow of petroleum in pipelines, or the blood flow through blood vessels in humans and animals. It has been realized a long time ago that the flow of electrons in a conductor should, under certain circumstances, also obey the laws of hydrodynamics. In particular, Gurzhi 1,2 predicted that electrons can exhibit a Poiseuille-type flow 3,4 analogous to that of liquids in pipes. This should result in an initial power-law decrease of resistivity with the transverse cross-section of a sample and temperature, leading to a pronounced minimum. It has turned out, however, that an experimental realization of such a regime in a metal or a semiconductor is a highly non-trivial task. Three decades have passed before de Jong and Molenkamp 5 observed the Gurzhi effect, and even in that work the magnitude of the effect did not exceed 20%.Why is it so difficult to implement electron hydrodynamics in a laboratory experiment? In contrast to molecules of a conventional liquid, electrons move in the environment formed by the crystal lattice. Therefore, the electrons experience not only collisions among themselves, but also scatter off thermally excited lattice vibrations -phonons -as well as various lattice imperfections (impurities). The hydrodynamic regime is realized when the frequency of electron-electron collisions is much larger than the rates of both, electron-phonon and electron-impurity scattering. These two requirements limit the temperature window for the hydrodynamic flow both from above and from below, and may even be in a conflict with each other. In a typical solid, the elastic impurity scattering dominates electronic transport at low temperatures, whereas at high temperatures the leading mechanism is the electron-phonon scattering. Thus, the requirement of the electron-electron scattering being the fastest process -which is the key condition for the hydrodynamics -may only be satisfied, if at all, in an intermediate temperature range. It turns out that this regime is not well developed in conventional conductors, with the possible exception of the ultrahigh-mobility GaAs quantum wells 6-8 exhibiting negative magnetoresistance 9 and ultra-pure palladium cobaltate 10 . The experimental discovery of graphene 11 has given a new boost to the research in the field of quantum transport. In particular, it has been realized that, among other remarkable properties, graphene is an excellent material for the realization of hydrodynamic flo...

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Section: Signatures Of Hydrodynamic Behavior In Graphenesupporting

confidence: 59%

“…Magnetoresistance of the two bilayer‐graphene samples with different widths and mobilities at the charge neutrality point and

T = 100

K. Solid (green) lines: experimental data; Dashed (blue) lines: theoretical fit using the semiclassical description of Ref.…”

Section: Signatures Of Hydrodynamic Behavior In Graphenementioning

confidence: 99%

Hydrodynamic Approach to Electronic Transport in Graphene

et al. 2017

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“…Another classical mechanism was presented by Alekseev et al for the linear MR in 2D two-component systems [48,56,57]. According to the model, electron-hole recombination allows for a lateral quasi-particle flow and excess quasi-particles will accumulate near the edges of sample, the rise of edge conductivity will lead to the emergence of linear MR. At the charge neutrality point, the total resistivity r total can be expressed as [56], where = + P n n e h is the quasi-particle density, l 0 is the recombination length at zero field, W is the width of sample, and μ is the mobility of carriers.…”

Section: Resultsmentioning

confidence: 99%

“…Kisslinger et al further pointed out that the linear MR in the PL model is induced by charge carrier density fluctuations rather than mobility fluctuations [55]. Recently, Alekseev et al proposed a new classical mechanism for linear MR in two-dimensional (2D) two-component systems [48,56,57]. In the model, the lateral quasiparticle flow leads to the accumulation of excess quasi-particles near the sample edges.…”

Section: Introductionmentioning

confidence: 99%

Magneto-transport and electronic structures of BaZnBi₂

Wang

Guo

et al. 2017

New J. Phys.

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We report the magneto-transport properties and electronic structures of BaZnBi 2 . BaZnBi 2 is a quasitwo-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi 2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi 2 .

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“…This is, furthermore, a scheme that is obviously applicable to any situation in which disorder occurs on the same scale as the mean free path, and provides a possible explanation for the observation of linear MR in topological materials . Note that linear MR in the vicinity of the Dirac point may have different origin …”

Section: Large‐area Bilayer Graphenementioning

confidence: 92%

Charge‐Carrier Transport in Large‐Area Epitaxial Graphene

et al. 2017

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We present an overview of recent charge carrier transport experiments in both monolayer and bilayer graphene, with emphasis on the phenomena that appear in large-area samples. While many aspects of transport are based on quantum mechanical concepts, in the large-area limit classical corrections dominate and shape the magnetoresistance and the tunneling conductance. The discussed phenomena are very general and can, with little modification, be expected in any atomically thin 2D conductor.

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Linear magnetoresistance in compensated graphene bilayer

Cited by 43 publications

References 41 publications

Hydrodynamic Approach to Electronic Transport in Graphene

Hydrodynamic Approach to Electronic Transport in Graphene

Magneto-transport and electronic structures of BaZnBi₂

Charge‐Carrier Transport in Large‐Area Epitaxial Graphene

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Linear magnetoresistance in compensated graphene bilayer

Cited by 43 publications

References 41 publications

Hydrodynamic Approach to Electronic Transport in Graphene

Hydrodynamic Approach to Electronic Transport in Graphene

Magneto-transport and electronic structures of BaZnBi2

Charge‐Carrier Transport in Large‐Area Epitaxial Graphene

Contact Info

Product

Resources

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Magneto-transport and electronic structures of BaZnBi₂