Linearity and Analog Performance Analysis of Silicon Junctionless Bulk FinFET Considering Gate Electrode Workfunction Variability and Different Fin Aspect Ratio

Biswas, Kalyan; Sarkar, Angsuman; Sarkar, Chandan Kumar

doi:10.1007/s12633-021-01513-6

Cited by 4 publications

(1 citation statement)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of SiGe in the channel region of the stacked channel FinFET increases the electron mobility, resulting in higher output transconductance in the TLSC and DLSC structures. This is because the electrons experience less resistance to their motion, and are able to Junctionless accumulation mode FinFET [23] Junctionless FinFET [24] Junctionless bulk FinFET [25] Gate flow more freely through the channel region. The output transconductance is obtained at a fixed gate voltage.…”

Section: Analysis Of Analog/rf Parametersmentioning

confidence: 99%

Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design

Singh,

Chaudhary,

Dewan

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel. For the analysis, three different channel structures are used: (a) tri-layer stack channel (TLSC) (Si–SiGe–Si), (b) double layer stack channel (DLSC) (SiGe–Si), (c) single layer channel (SLC) (Si). The I−V characteristics, subthreshold swing (SS), drain-induced barrier lowering (DIBL), threshold voltage (V t), drain current (I ON), OFF current (I OFF), and ON-OFF current ratio (I ON/I OFF) are observed for the structures at a 20 nm gate length. It is seen that TLSC provides 21.3% and 14.3% more ON current than DLSC and SLC, respectively. The paper also explores the analog and RF factors such as input transconductance (g m), output transconductance (g ds), gain (g m/g ds), transconductance generation factor (TGF), cut-off frequency (f T), maximum oscillation frequency (f max), gain frequency product (GFP) and linearity performance parameters such as second and third-order harmonics (g m2, g m3), voltage intercept points (VIP2, VIP3) and 1-dB compression points for the three structures. The results show that the TLSC has a high analog performance due to more g m and provides 16.3%, 48.4% more gain than SLC and DLSC, respectively and it also provides better linearity. All the results are obtained using the VisualTCAD tool.

show abstract

Section: Analysis Of Analog/rf Parametersmentioning

confidence: 99%