Linearity Measurement of a Silicon Single-Drive Push-Pull Mach-Zehnder Modulator

Zhou, Yichao; Zhou, Linjie; Su, Feiran; Xie, Jingya; Zhu, Hongying; Li, Xinwan; Chen, Jianping

doi:10.1364/cleo_si.2015.sw3n.6

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…6 shows the highest SFDR; in this case the plot has an SFDR of 52 dB for 1 GHz bandwidth, or an SFDR of 112 dB•Hz 2/3 . Figure 7 compares major results of recent works on the linearity of modulators fabricated on a Si, CMOS compatible platform [10,12,[18][19][20][21][22][23]. This work surpasses the previous record for a linearized modulator on Si, obtained using the RAMZI modulator design [12], without the need of coupled microresonators and their wavelength dependent operation.…”

Section: Device Characterizationmentioning

confidence: 77%

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

Zhang¹,

Morton²,

Khurgin³

et al. 2016

Opt. Express

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In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz^2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.

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Section: Device Characterizationmentioning

confidence: 77%

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

Zhang¹,

Morton²,

Khurgin³

et al. 2016

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Some of the methods are compatible with any modulator type, while others are specific to a certain design. References used are for RAMZI [297][298][299], doping control [291,296,303,304], dual-parallel [300,301], hybrid III-V/Si [289,299,305], ring [306,307], predistortion [308][309][310], and other [274,[311][312][313][314].…”

Section: Improving the Modulator Efficiencymentioning

confidence: 99%

Millimeter-wave generation using hybrid silicon photonics

Degli-Eredi

Jacob

et al. 2021

J. Opt.

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Technological innovation with millimeter waves (mm waves), signals having carrier frequencies between 30 and 300 GHz, has become an increasingly important research field. While it is challenging to generate and distribute these high frequency signals using all-electronic means, photonic techniques that transfer the signals to the optical domain for processing can alleviate several of the issues that plague electronic components. By realizing optical signal processing in a photonic integrated circuit (PIC), one can considerably improve the performance, footprint, cost, weight, and energy efficiency of photonics-based mm-wave technologies. In this article, we detail the applications that rely on mm-wave generation and review the requirements for photonics-based technologies to achieve this functionality. We give an overview of the different PIC platforms, with a particular focus on hybrid silicon photonics, and detail how the performance of two key components in the generation of mm waves, photodetectors and modulators, can be optimized in these platforms. Finally, we discuss the potential of hybrid silicon photonics for extending mm-wave generation towards the THz domain and provide an outlook on whether these mm-wave applications will be a new milestone in the evolution of hybrid silicon photonics.

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“…The silicon waveguide under the III-V mesa is 600 nm in width, to increase the optical mode confinement factor in the III-V MQW stack, which consists of 12 QWs with PL wavelength centered at 1360 nm, as described in the detailed design in [14]. The cathodes of all four active sections are connected as the bias port for push-pull operation [16]. Two types of RAMZI modulator were fabricated: strong-and weak-coupled ring designs, with the as-fabricated power coupling ratio determined to be 0.79 and 0.55, representing the coupling coefficients to be 0.89 and 0.74, respectively.…”

Section: Principle Design and Fabricationmentioning

confidence: 99%

Ultralinear heterogeneously integrated ring-assisted Mach–Zehnder interferometer modulator on silicon

Zhang

Morton

Khurgin

et al. 2016

Optica

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A linear modulator is indispensable for radio frequency photonics or analog photonic link applications where high dynamic range is required. There is also great interest to integrate the modulator with other photonic components, to create a photonic integrated circuit for these applications, with particular focus on silicon photonics integration in order to take advantage of complementary metal-oxide-semiconductor compatible foundries for high-volume, low-cost devices. However, all silicon modulators, including the highest performing Mach-Zehnder interferometer (MZI) type, have poor linearity, partially due to the inherent nonlinearity of the MZI transfer characteristic, but mostly due to the nonlinearity of silicon's electro-optic phase shift response. In this work, we demonstrate ultralinear ring-assisted MZI (RAMZI) modulators, incorporating heterogeneously integrated III-V multiple quantum wells on silicon phase modulation sections to eliminate the nonlinear silicon phase modulation response. The heterogeneously integrated III-V/Si RAMZI modulators achieve record-high spurious free dynamic range (SFDR) for silicon-based modulators, as high as 117.5 dB • Hz 2∕3 at 10 GHz for a weakly coupled ring design, and 117 dB • Hz 2∕3 for a strongly coupled ring design with higher output power. This is a higher SFDR than typically obtained with commercial lithium niobate modulators. This approach advances integrated modulator designs on silicon for applications in compact and high-performance analog optical systems.

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Linearity Measurement of a Silicon Single-Drive Push-Pull Mach-Zehnder Modulator

Cited by 7 publications

References 5 publications

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si

Millimeter-wave generation using hybrid silicon photonics

Ultralinear heterogeneously integrated ring-assisted Mach–Zehnder interferometer modulator on silicon

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