Linewidth Characterization of Integrable Slotted Single-Mode Lasers

Abdullaev, Azat; Lu, Qiaoyin; Guo, Weihua; Nawrocka, Marta; Bello, Frank; O’Callaghan, James; Donegan, John F.

doi:10.1109/lpt.2014.2350772

Cited by 10 publications

(6 citation statements)

References 19 publications

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“…The simulated threshold current under uniform injection is approximately 28 mA compared to experimental measurements of roughly 25 mA. The discrepancy in threshold current can be accounted for in the estimated values for injection efficiency and the spontaneous emission rate [1], [15]. This also compensates for the shift in hopping position of roughly 5-10 mA between experiment and theory.…”

Section: Comparison With Experimentsmentioning

confidence: 79%

“…Its 37th order grating design had been previously optimized using 24 slots with a depth of 1.35 μm to minimize linewidth while still allowing sufficient transmission of power through the grating [image in Fig. 1(a)] [14], [15]. The 37th order corresponds to a slot width (d s ) of 1.09 μm and period (d p ) of 8.96 μm in order to excite a wavelength of 1550 nm.…”

Section: Introductionmentioning

confidence: 99%

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Athermal Tuning for a Two-Section, All-Active DBR Laser With High-Order Grating

et al. 2018

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We incorporate thermal effects for injection currents ranging up to 150 mA in order to model the tuning behavior of a two-section, all-active distributed-Bragg-reflector (DBR), ridge-waveguide semiconductor laser utilized for a single-mode operation. In particular, we investigate wavelength tuning as a function of injected currents within the grating and phase/gain sections of the laser cavity and examine how any athermal lasing conditions may arise. The effect of thermal drift on the resonant wavelength due to a change in refractive index as well as thermal expansion of the laser cavity is included within a traveling wave analysis (TWA). From the TWA, the spatial distribution of gain along the active region of the laser is also derived in order to help describe the tuning behavior for a high-order (37th) grating previously optimized to minimize linewidth. A comparative analysis with a single mirrored, active-passive DBR laser is also included. Results show a good agreement with reported experimental data and compare well with the wavelength stability of other laser devices.

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Section: Comparison With Experimentsmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Athermal Tuning for a Two-Section, All-Active DBR Laser With High-Order Grating

et al. 2018

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“…In 2014, Abdullaev et al [41] In order to meet the demand of low cost 1550 nm band semiconductor laser chips in the field of optical communication, a coupled-cavity semiconductor laser based on Lot grating structure is proposed by Santa Fe University in Dublin. The single longitudinal mode lasers with SMRR of more than 50 dB are realized in 1569 nm band [43].…”

Section: Coupled Cavity Semiconductor Lasermentioning

confidence: 99%

Advances in narrow linewidth diode lasers

Lang

Jia

Chen

et al. 2019

Sci. China Inf. Sci.

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“…This arises due to the fact that a single FP mode is focussed upon with the grating selection method employed. Abdullaev et al showed that individual FP modes can demonstrate narrower spectral linewidths than conventional DFBs or external cavity diode lasers (ECDL) [13]. Figure 1 shows a scanning electron microscope (SEM) image of the grating.…”

Section: Device Propertiesmentioning

confidence: 99%

GaN-based distributed feedback laser diodes for optical communications

Gwyn

Watson

Viola

et al. 2019

Fourth International Conference on Applications of Optics and Photonics

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eOver the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr +) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems.

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Linewidth Characterization of Integrable Slotted Single-Mode Lasers

Cited by 10 publications

References 19 publications

Athermal Tuning for a Two-Section, All-Active DBR Laser With High-Order Grating

Athermal Tuning for a Two-Section, All-Active DBR Laser With High-Order Grating

Advances in narrow linewidth diode lasers

GaN-based distributed feedback laser diodes for optical communications

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