Linewidth Rebroadening in Quantum Dot Semiconductor Lasers

Redlich, Christoph; Lingnau, Benjamin; Huang, Heming; Raghunathan, Ravi; Schires, Kevin; Poole, Philip J.; Grillot, Frédéric; Lüdge, Kathy

doi:10.1109/jstqe.2017.2701555

Cited by 13 publications

(7 citation statements)

References 42 publications

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“…An important observation in Fig. 11 is that the measured linewidth narrowing does not show any saturation with output power, while other lasers often display a lowest linewidth-value, or even an linewidth increase vs. power [117,109,150,151,152]. A possible explanation for down-scalability of the linewidth with power, here and even more so with the dual-gain laser, is the absence of noticeable nonlinear effects in the laser cavity, specifically, in the Si3N4 feedback resonators where the power is highest.…”

Section: Hybrid Integrated Laser With Record-low Linewidthmentioning

confidence: 90%

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

et al. 2019

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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 µm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

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Section: Hybrid Integrated Laser With Record-low Linewidthmentioning

confidence: 90%

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

et al. 2019

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“…27 In QD lasers, this effect is even more pronounced because of the increased scattering rates with the injected current and larger gain nonlinearities. 28 As for the AR/AR DFB laser depicted in Fig. 4 (blue), the minimum linewidth is at 300 kHz with a fitted intrinsic Lorentzian linewidth as low as 110 kHz.…”

mentioning

confidence: 75%

Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

Duan

Huang

Lü³

et al. 2018

Applied Physics Letters

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“…The spectral linewidth of the AR/HR laser rebroadens up to 544 kHz at 1/P = 0.16. The linewidth rebroadening occurring in semiconductor lasers can be explained by thermal effects, mode instability, LSHB and gain compression 75 . The first three of these effects are directly caused by the device structure and can be minimized or eliminated through the optimization of the laser design.…”

Section: Introductionmentioning

confidence: 99%

Uncovering recent progress in nanostructured light-emitters for information and communication technologies

et al. 2021

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Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.

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Linewidth Rebroadening in Quantum Dot Semiconductor Lasers

Cited by 13 publications

References 42 publications

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

Uncovering recent progress in nanostructured light-emitters for information and communication technologies

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