2021
DOI: 10.1016/j.surfcoat.2021.127235
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Link between plasma properties with morphological, structural and mechanical properties of thin Ti films deposited by high power impulse magnetron sputtering

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Cited by 14 publications
(9 citation statements)
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“…The film thickness was ∼5 nm with density of ∼4.36-4.43 g cm −3 . This thickness was thinner than the experimental deposition (∼280-400 nm) so that the film microstructures between simulation and experiments may be different as discussed in [49]. However, in our mind, this simulation can still reveal the effect of ion energy on the nucleation and film roughness, qualitatively, because these properties are mainly related to the substrate surface condition and ion energy in fact.…”
Section: Ti Films Deposition and MD Simulationmentioning
confidence: 82%
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“…The film thickness was ∼5 nm with density of ∼4.36-4.43 g cm −3 . This thickness was thinner than the experimental deposition (∼280-400 nm) so that the film microstructures between simulation and experiments may be different as discussed in [49]. However, in our mind, this simulation can still reveal the effect of ion energy on the nucleation and film roughness, qualitatively, because these properties are mainly related to the substrate surface condition and ion energy in fact.…”
Section: Ti Films Deposition and MD Simulationmentioning
confidence: 82%
“…Figures 11 (a) and (b) shows the Ti atom distributions on the Si surface at the initial period (t = 50 ps) of deposition when the adsorbed Ti atoms have not coated the Si substrate completely. At r H = 20%, lots of individual atoms without nucleation appear on the Si surface (marked by the red circle), illustrating that their energy are lower than the threshold for free diffusion [49]. The local details are given in figure 12(b), correspondingly, that three individual Ti atoms are marked in red ball.…”
Section: Deposition Of Ti Filmsmentioning
confidence: 98%
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“…As discussed in Section 2.1 , during the growth process, high-valence state plasma also acquires kinetic energy from the bias voltage, disrupting the continuous growth of columnar crystals and even re-sputtering loose grains, ensuring coating densification. Therefore, high-flux ionization excited by HiPIMS can surmount the typical low-density and rough microstructure, resulting in a unique morphology attained by low-temperature sputter deposition [ 33 , 40 , 109 , 110 , 111 , 112 , 113 , 114 , 115 ]. In comparison to coatings deposited by DCMS, HiPIMS imparted a higher hardness, lower friction coefficient, and better adhesion, wear resistance, and corrosion resistance to the coating [ 93 ].…”
Section: The Influence Of Hipims and Dcms Techniques On The Growth Of...mentioning
confidence: 99%
“…It is known that quite a few factors will affect the measured hardness of a deposited film, such as sputtering power, bias voltage, and even the (nano)indentation techniques used to measure hardness. There is limited published literature on the hardness of pure Ti films; however, in a few publications, the reported hardness of Ti-films varies from 2.4~10 GPa depending on the deposition method, coating thickness and crystallographic orientation [20,[38][39][40][41][42][43][44][45]. It is also noticeable that DCMS sputtered films being found to have a lower hardness (~8GPa) than EB-evaporated films (~10GPa) in the study of Arshi et al [45] .…”
Section: Film Hardnessmentioning
confidence: 99%