Liquid and Back Gate Coupling Effect: Toward Biosensing with Lowest Detection Limit

Pud, Sergii; Li, Jing; Sibiliev, V.; Petrychuk, M. V.; Kovalenko, V. F.; Offenhäusser, Andreas; Vitusevich, S. А.

doi:10.1021/nl403748x

Cited by 42 publications

(38 citation statements)

References 37 publications

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“…30 Pud et al explain the physical origin of this improved transconductance as due to the back-gate voltage shifting the conducting channel from the oxide-semiconductor interface to the bulk semiconductor where less scattering occurs and a higher mobility is attained. 16 In our published work, 30 the physical origin of the improved top-gate subthreshold slope shows the drain current (solid) and because ΔV T is small (0.019 V), the before/after streptavidin addition drain currents are overlaid at this scale. The drain current response was extracted from the paper and the transconductance (g m , dashed line) was calculated in the figure, presented here from the drain current response using second order and first order central differences on the interior and boundaries respectively.…”

Section: Signal-to-noise Ratio Enhancementmentioning

confidence: 99%

“…11 However, the extension of these devices to sensitive and reliable detection of biomolecular analytes ('BioFET' devices) has proved more difficult than initially expected. These problems have resulted in research providing a range of novel FET-sensor architectures [12][13][14] and methods of operation, [15][16][17] however advances in the field of BioFET research are obstructed by a lack of consensus on which quantitative metrics (i.e. figure-of-merit) should be used to compare devices.…”

Section: Introductionmentioning

confidence: 99%

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Field-effect sensors – from pH sensing to biosensing: sensitivity enhancement using streptavidin–biotin as a model system

Lowe

Sun

Zeimpekis

et al. 2017

Analyst

135

107

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a Field-Effect Transistor sensors (FET-sensors) have been receiving increasing attention for biomolecular sensing over the last two decades due to their potential for ultra-high sensitivity sensing, label-free operation, cost reduction and miniaturisation. Whilst the commercial application of FET-sensors in pH sensing has been realised, their commercial application in biomolecular sensing (termed BioFETs) is hindered by poor understanding of how to optimise device design for highly reproducible operation and high sensitivity. In part, these problems stem from the highly interdisciplinary nature of the problems encountered in this field, in which knowledge of biomolecular-binding kinetics, surface chemistry, electrical double layer physics and electrical engineering is required. In this work, a quantitative analysis and critical review has been performed comparing literature FET-sensor data for pH-sensing with data for sensing of biomolecular streptavidin binding to surface-bound biotin systems. The aim is to provide the first systematic, quantitative comparison of BioFET results for a single biomolecular analyte, specifically streptavidin, which is the most commonly used model protein in biosensing experiments, and often used as an initial proofof-concept for new biosensor designs. This novel quantitative and comparative analysis of the surface potential behaviour of a range of devices demonstrated a strong contrast between the trends observed in pH-sensing and those in biomolecule-sensing. Potential explanations are discussed in detail and surfacechemistry optimisation is shown to be a vital component in sensitivity-enhancement. Factors which can influence the response, yet which have not always been fully appreciated, are explored and practical suggestions are provided on how to improve experimental design.

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Section: Signal-to-noise Ratio Enhancementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Field-effect sensors – from pH sensing to biosensing: sensitivity enhancement using streptavidin–biotin as a model system

Lowe

Sun

Zeimpekis

et al. 2017

Analyst

135

107

View full text Add to dashboard Cite

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“…16. A strong coupling between the liquid gate and back gate has been revealed and used for the optimization of SNR in sub-threshold as well as abovethreshold regimes.…”

Section: -30mentioning

confidence: 99%

“…As is known, quantization effects in Si NW lead to the shift of the maximum values of the concentration of the majority carriers from the Si/SiO 2 interface. 16 The majority carriers are located near FOX and occupy the region at a depth of 1-2 nm. More than 90% of the channel thickness does not contribute to the dynamic processes and is in a passive state.…”

Section: à3mentioning

confidence: 99%

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

Gasparyan

Khondkaryan

Arakelyan

et al. 2016

Journal of Applied Physics

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A pH sensor with a double-gate silicon nanowire field-effect transistor Appl. Phys. Lett. 102, 083701 (2013) The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p þ -p-p þ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10

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“…29 An effect of coupling between the liquid and back gate has been revealed in Ref. 30, and utilized to increase the sensitivity of the liquid-gated FET by 50%. Usually, in the case of very small channel cross sections (/ 10 À10 Ä 10 À12 cm 2 ), only a single trap may determine the channel current fluctuations.…”

Section: Introductionmentioning

confidence: 99%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

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Liquid and Back Gate Coupling Effect: Toward Biosensing with Lowest Detection Limit

Cited by 42 publications

References 37 publications

Field-effect sensors – from pH sensing to biosensing: sensitivity enhancement using streptavidin–biotin as a model system

Field-effect sensors – from pH sensing to biosensing: sensitivity enhancement using streptavidin–biotin as a model system

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

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