Abstract:In this work, we synthesize Hafnium (IV) oxide (HfO2) ink from hafnium chloride (HfCl4) powder assisted with deionized water. The poly acrylic acid (PAA) is used as surfactant to decrease the surface tension. Conversion of HfCl4 into HfO2 was detected by Raman spectroscopy and energy dispersive X-ray spectroscopy (EDS) characterization techniques. This proposed ink can be easily synthesized at a low temperature. Using the synthesis ink, a liquid capacitor is proposed, which is tested for electrochemical analys… Show more
“…The Raman spectra of heterostructure thin films also reveal the peaks of monoclinic HfO 2 , which can be seen quite clearly and are located at (A g ) 153 cm −1 , (B g ) 168 cm −1 and (A g ) 268 cm −1 modes. This is comparable to the findings that have been published for HfO 2 in the relevant literature [ 44 , 45 ]. Fig.…”
“…The Raman spectra of heterostructure thin films also reveal the peaks of monoclinic HfO 2 , which can be seen quite clearly and are located at (A g ) 153 cm −1 , (B g ) 168 cm −1 and (A g ) 268 cm −1 modes. This is comparable to the findings that have been published for HfO 2 in the relevant literature [ 44 , 45 ]. Fig.…”
“…As can be seen, the Raman spectra at points 1 and 2 (the oxidized surface and the one closest to the surface crack of the sample in the region of the HfO 2 -SiO 2 layer, respectively) have the same set of bands. A detailed analysis of these spectra reveals 14 characteristic bands (ω 1 -ω 14 at 150, 165, 241, 257, 332, 381, 398, 499, 525, 554, 578, 631, 671 and 756 cm −1 ) of different intensities belonging to the Ag and Bg modes of the monoclinic phase of HfO 2 , in good agreement with the literature data [62][63][64][65]. In addition to the monoclinic HfO 2 phase, seven characteristic Raman modes of the ω H1 -ω H7 phase of hafnone (HfSiO 4 ) are detected at these sites at 442, 808, 854, 907, 937, 976 and 1028 cm −1 , which are also in good agreement with the available literature data [66][67][68][69].…”
The short-term (5 min) exposure to the supersonic flow of carbon dioxide plasma on ultrahigh-temperature ceramics of HfB2-30vol.%SiC composition has been studied. It was shown that, when established on the surface at a temperature of 1615–1655 °C, the beginning of the formation of an oxidized layer takes place. Raman spectroscopy and scanning electron microscopy studies showed that the formation of a porous SiC-depleted region is not possible under the HfO2-SiO2 surface oxide layer. Numerical modeling based on the Navier–Stokes equations and experimental probe measurements of the test conditions were performed. The desirability of continuing systematic studies on the behavior of ultrahigh-temperature ZrB2/HfB2-SiC ceramics, including those doped with various components under the influence of high-enthalpy gas flows, was noted.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
