Liquid phase epitaxial growth of AgGaS2 using chalcogenide (sulphide) fluxes

Sashital, S. R.; Gentile, A. L.

doi:10.1016/0022-0248(84)90346-4

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Cited by 11 publications

(1 citation statement)

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“…It exhibits high double refraction and a wide transparency region, and is therefore a promising material for quantum electronics [1]. The ternary compounds Ag 3 AsS 3 and AgAsS 2 are used as non-linear optical materials [2,3]. As 2 S 3 is a glass-forming compound, and therefore glassy materials should exist in the Ag 2 S−Ga 2 S 3 -As 2 S 3 system.…”

Section: Introductionmentioning

confidence: 99%

The Ag2S–Ga2S3–As2S3 system

Klymuk¹,

Olekseyuk²,

Mazurets³

2015

Chem. Met. Alloys

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Section: Introductionmentioning

confidence: 99%

The Ag2S–Ga2S3–As2S3 system

Klymuk¹,

Olekseyuk²,

Mazurets³

2015

Chem. Met. Alloys

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Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

Zhbankov¹,

Olekseyuk

Yurchenko

et al. 2006

Cryst. Res. Technol.

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The phase diagrams of the CuInS 2 -Sb 2 S 3 and CuInS 2 -Bi 2 S 3 systems were investigated using X-ray powder diffraction and differential thermal analysis. Based on these results, the compositions for the growth of the CuInS 2 single crystals from CuInS 2 -Sb 2 S 3 and CuInS 2 -Bi 2 S 3 melts were selected and Bridgman crystal growth process was performed. The investigation of the obtained single crystals using X-ray powder diffraction and optical absorption spectra indicates that the incorporation of the solvent atoms into the crystal lattice is absent.

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A^IB^IIIC^VI₂‐Halbleiter mit Chalcopyritstruktur

Kühn

Neumann

1987

Zeitschrift fuer Chemie

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The ternary AIBIIICVI2 chalcopyrite semiconductors are current of technological interest since they show promise for applications in such areas as solar cells and non‐linear optics. In this paper we give a survey about the crystal chemistry of this compounds including the structure of epitaxial layers and discuss some new results concerning their thermal properties. Furthermore the influence of the p‐d hybridization of the uppermost valence band on the band gap and the nature of the intrinsic defects in CuInSe2 are considered.

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Liquid phase epitaxial growth of AgGaS2 using chalcogenide (sulphide) fluxes

Cited by 11 publications

References 7 publications

The Ag2S–Ga2S3–As2S3 system

The Ag2S–Ga2S3–As2S3 system

Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

A^IB^IIIC^VI₂‐Halbleiter mit Chalcopyritstruktur

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Liquid phase epitaxial growth of AgGaS2 using chalcogenide (sulphide) fluxes

Cited by 11 publications

References 7 publications

The Ag2S–Ga2S3–As2S3 system

The Ag2S–Ga2S3–As2S3 system

Growth of CuInS2 single crystals from Sb2S3 and Bi2S3 solutions

AIBIIICVI2‐Halbleiter mit Chalcopyritstruktur

Contact Info

Product

Resources

About

A^IB^IIIC^VI₂‐Halbleiter mit Chalcopyritstruktur