Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

Saidov, A. S.; Razzakov, A. Sh.; Gaimnazarov, K. G.

doi:10.1134/1.1424410

Cited by 3 publications

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“…At the boundary region of the heterostructure, the Ga 2 Se 3 compound is formed as a by-product, whereas the Zn atoms diffuse from the interface into the GaAs substrate [6]. In Reference [7], the possibility of growing of the variable-gap solid solution (GaAs) 1−x (ZnSe) x , by liquid-phase epitaxy from a Pb solution-melt on GaAs (100) substrates with a diameter of 20 mm, in the temperature range 870-730°C, was demonstrated. Epitaxial layers (GaAs) 1−x (ZnSe) x had an n-type conductivity, a carrier concentration of n � 7.6 • 10 19 cm −3 , and a monocrystalline structure with a continuously varying composition x from 0 to 0.07.…”

Section: Introductionmentioning

confidence: 99%

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals

Saidov

Usmonov

Saparov

2019

Advances in Materials Science and Engineering

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In this work, we explored the possibility of growing a substitutional solid solution (GaAs)1−x(ZnSe)x with an ordered array of nanosize crystals on GaAs (100) substrates. Grown epitaxial films were investigated by the X-ray diffraction analysis method. The chemical composition of the grown epitaxial films was determined by a X-ray microanalyzer, along the thickness of the epitaxial layer. The photoluminescence spectrum was studied and a peak is observed at λmax = 465 nm, corresponding to the width of the band gap of zinc selenide EZnSe = 2.67 eV, which is apparently due to the nanocrystals ZnSe, disposed in the surface region of the epitaxial film of a solid solution (GaAs)1−x(ZnSe)x. Size of nanocrystals were evaluated by an atomic force microscopy.

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Section: Introductionmentioning

confidence: 99%

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals

Saidov

Usmonov

Saparov

2019

Advances in Materials Science and Engineering

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Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

Saidov

Usmonov

et al. 2011

Phys. Solid State

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Morphological investigations of solid solutions (GaAs)<sub>1-x</sub>(ZnSe)<sub>x</sub> doped with < Sb >

2023

Funct.Mater.

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Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

Cited by 3 publications

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Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals

Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

Morphological investigations of solid solutions (GaAs)<sub>1-x</sub>(ZnSe)<sub>x</sub> doped with < Sb >

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Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

Cited by 3 publications

References 0 publications

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

Morphological investigations of solid solutions (GaAs)<sub>1-x</sub>(ZnSe)<sub>x</sub> doped with < Sb >

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Product

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Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−x(ZnSe)_x with Nanocrystals