Liquid phase epitaxy of Ge1−x Snx semiconductor films

Saidov, A. S.; Razzakov, A. Sh.; Koshchanov, É. A.

doi:10.1134/1.1398973

Cited by 5 publications

(2 citation statements)

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“…It is desirable that the initial growth temperature be less than 923 K to obtain perfectly crystalline, low-dislocation germanium crystals. If germanium crystals are grown from tin solution at temperatures below 800 K, a solid mixture with an epitaxial layer of Ge1-xSnx is formed [12]. The following are images of the Ge1-xSnx epitaxial layers formed under these conditions obtained using a scanning electron microscope (SEM) (Figure 6-7).…”

Section: Resultsmentioning

confidence: 99%

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Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

Razzokov

Eshchanov

2022

International Journal of Thermodynamics

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Thermodynamic calculations were performed to determine the optimal conditions for the growth of germanium epitaxial layers from a Ge-Sn solution (system) to a germanium substrate. The determination of the optimal conditions was based on the change in the Gibbs energy values of the system during the crystallization process and the size of the crystal-forming nanoclusters. Based on the results obtained, we determined the optimal conditions for obtaining low-dislocation, crystalline perfect germanium epitaxial layers from a liquid tin solution, and recommended starting the crystallization process at 923 K and finishing at 800 K. When the temperature drops below 800 K, the formation of Ge1-xSnx epitaxial layers from the Ge-Sn solution was observed.

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Section: Resultsmentioning

confidence: 99%

“…In our previous work, we reported that on the basis of experiments we managed to obtain epitaxial layers Ge1-xSnx in the temperature range 740÷450ºC [12].…”

Section: Introductionmentioning

confidence: 99%

Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

Razzokov

Eshchanov

2022

International Journal of Thermodynamics

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Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

Roucka

Beeler

Mathews

et al. 2011

Journal of Applied Physics

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Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02.

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Liquid phase epitaxy of Ge1−x Snx semiconductor films

Cited by 5 publications

References 0 publications

Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

Liquid-Phase Epitaxy

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

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