The article shows the selection of the optimal process regime for the growth of epitaxial layers of Si1–xGex solid solutions from tin and gallium solution – melt on a Si<111> substrate, with the lowest dislocation densities that we experimentally achieved. An exponential relationship was found between the values of the dislocation density and the film thickness.With a smooth variable composition of the structure, respectively, by smoothly changing the lattiece parameters of the graded-gap solid solution, structurally perfect epitaxial layers Si1–xGex (0 < x < 1) were obtained

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