Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

Abstract

The article shows the selection of the optimal process regime for the growth of epitaxial layers of Si1–xGex solid solutions from tin and gallium solution – melt on a Si<111> substrate, with the lowest dislocation densities that we experimentally achieved. An exponential relationship was found between the values of the dislocation density and the film thickness.With a smooth variable composition of the structure, respectively, by smoothly changing the lattiece parameters of the graded-gap solid solution, structurally perfect epitaxial layers Si1–xGex (0 < x < 1) were obtained

Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

“…The epitaxial layers of the Si1-xGex solid solution were grown by us from a limited volume of a tin and gallium solution-melt by the method of liquid epitaxy. Morphological and structural studies of the grown solid solutions showed that with increasing temperature, the onset of crystallization at the substrate-film boundary of the dislocation density (Nd) increases from 9.5 × 10 4 cm -2 (at a temperature of 900℃) to 7.5 × 10 5 cm -2 (at a temperature of 1050℃) [8].…”