Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

Abstract

In situ X-ray examination at a synchrotron beamline of the solution growth of self-assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace have been numerically modeled. In this way a meaningful estimate about the power consumption and the thermal gradient across the sample has been reached. Despite its low heat capacity and, thus, fast heating and cooling ability the furnace can be stabilized to ± 0.1 K by a highperformance temperature controller. The growth assembly has been prepared within three separate stages carried out in conventional slideboat liquid phase epitaxy equipment. Such growth assembly allows carrying out then intended experiments without H 2 as normally used in liquid phase epitaxy in favor of N 2 , meeting the demand of minimized risks at beamlines. The equipment ensures an easy handling of the growth assembly.

In situ X‐ray investigation of SiGe/Si islands grown by liquid phase epitaxy

“…Before the in situ samples were analysed with electron microscopy the residual melt was etched. Both measurements prove the SiGe/Si(001) island growth with the in situ samples 14.…”

“…The required amount of germanium is added at room temperature right before every in situ experiment. This is possible because the solidified Si‐saturated Bi does not adhere to the graphite platen 14.…”

“…A Eurotherm 2704 high‐performance multiloop controller affords the temperature control of the heating elements. To ensure high temperature homogeneity, finite element simulations of the thermal conduction and heat flow were applied 14.…”