No abstract

Articles you may be interested inIn situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metalorganic vapor-phase epitaxy J. Appl. Phys. 98, 033522 (2005); Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001)GaAs

No abstract

In situ X-ray examination at a synchrotron beamline of the solution growth of self-assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace have been numerically modeled. In this way a meaningful estimate about the power consumption and the thermal gradient across the sample has been reached. Despite its low heat capacity and, thus, fast heating and cooling ability the furnace can be stabilized to ± 0.1 K by a highperformance temperature controller. The growth assembly has been prepared within three separate stages carried out in conventional slideboat liquid phase epitaxy equipment. Such growth assembly allows carrying out then intended experiments without H 2 as normally used in liquid phase epitaxy in favor of N 2 , meeting the demand of minimized risks at beamlines. The equipment ensures an easy handling of the growth assembly.

We report on the in situ observation during liquid phase epitaxy (LPE) of Stranski–Krastanow grown SiGe/Si(001) islands with X‐ray diffraction methods. Therefore, we developed a growth chamber combined with pre‐processed samples which afford LPE under N2 atmosphere (instead of H2 which is normally used for LPE) at a synchrotron beamline. The island evolution is probed with X‐ray diffraction methods from the backside of a thin silicon substrate which floats on the melt. The way towards LPE in situ X‐ray diffraction experiments will be described. Our results show the development of X‐ray diffraction signals in dependence of the current growth state.