A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

Dadgar, A.; Oleynik, N.; Förster, D.; Deiter, S.; Witek, Helvi; Bläsing, J.; Bertram, F.; Krtschil, A.; Diez, A.; Christen, J.; Krost, A.

doi:10.1016/j.jcrysgro.2004.03.028

Cited by 53 publications

(51 citation statements)

References 6 publications

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“…For the past ten years, ZnO epilayer, ZnO nanorods, and various ZnO nanostructures have been grown by various techniques, including molecular beam epitaxy, 1-4 metal organic vapor phase epitaxy or metal organic chemical vapor deposition, [5][6][7][8][9][10] pulsed laser deposition, 11,12 vapor-liquid-solid ͑VLS͒ catalytic growth technique, [13][14][15] magnetron sputtering, 16 and chemical bath deposition ͑CBD͒. [17][18][19] A major advantage for ZnO nanostructures, e.g., nanowires and nanorods, is that they can be easily grown on various substrates and nonlattice materials including flexible polymers.…”

Section: Introductionmentioning

confidence: 99%

Surface recombination in ZnO nanorods grown by chemical bath deposition

Zhao¹,

Yang²,

Willander³

et al. 2008

Journal of Applied Physics

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Vertically well-aligned ZnO nanorods on Si substrates were prepared by a two-step chemical bath deposition ͑CBD͒ method. The optical properties of the grown ZnO nanorods were investigated by time resolved photoluminescence spectroscopy. It was found that the effective decay time of the near bandgap recombination in the CBD grown ZnO nanorods strongly depends on the diameter of the ZnO nanorods. Typically, the decay curves obtained from these ZnO nanorods show a combination of two exponential decays. The experimental results show that the fast exponential decay is related to the surface recombination and the slow decay is related to the "bulk" decay. The measured decay time of the effective surface recombination decreases with decreasing diameter, while the bulk decay time remains unchanged. The results also show that an annealing treatment around 500°C significantly reduces the surface recombination rate. A simple carrier and exciton diffusion equation is also used to determine the surface recombination velocity, which results in a value between 1.5 and 4.5 nm/ps.

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Section: Introductionmentioning

confidence: 99%

Surface recombination in ZnO nanorods grown by chemical bath deposition

Zhao¹,

Yang²,

Willander³

et al. 2008

Journal of Applied Physics

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“…Much effort has been made to produce high-quality ZnO epilayers. In the past few years, singlecrystal ZnO films have been grown with metal-organic vapor phase epitaxy [7], pulsed-laser deposition [8], and plasma-assisted molecular beam epitaxy (MBE) [9]. MBE is recognized as a technique for preparing high-quality layers with good thickness and composition uniformity, sharp dopant profiles and interfaces.…”

Section: Introductionmentioning

confidence: 99%

CBE growth of high‐quality ZnO epitaxial layers

El-Shaer

Bakin

Mofor

et al. 2006

Physica Status Solidi (b)

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Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates.

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“…The final nominally 2 µm thick ZnO layer is then grown in a second step at high temperature (900 • C) using N 2 O as O-precursor. Details of this optimized growth procedure are given elsewhere [5].…”

Section: Homo/heterointerfacesmentioning

confidence: 99%

Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures

Bertram

Christen

2006

Acta Phys. Pol. A

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The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the FranzKeldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo-and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.

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A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

Cited by 53 publications

References 6 publications

Surface recombination in ZnO nanorods grown by chemical bath deposition

Surface recombination in ZnO nanorods grown by chemical bath deposition

CBE growth of high‐quality ZnO epitaxial layers

Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures

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