Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy

Abstract

Articles you may be interested inIn situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metalorganic vapor-phase epitaxy J. Appl. Phys. 98, 033522 (2005); Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001)GaAs

Metal-organic chemical vapor deposition of ZnO

“…The full-width at half-maximum (FWHM) of the ZnO (0 0 2) peak showed a significant decrease from 400 to 450 1C, indicating increased crystallinity at and above growth temperatures of 450 1C. The lower crystal quality and higher RMS surface roughness, discussed later, suggest that layers grown below 450 1C are useful as buffer layers for nucleation of highquality films to be grown at higher temperatures [27]. These trends were also reflected in Raman spectroscopy data, which showed an increase in crystal quality above 450 1C.…”

Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films

“…The crystal properties of ZnO films strongly depend on the technology of the deposition and the conditions of the growth process as well as of the different post growth treatments [18]. Previously, different annealing schemes such as rapid thermal annealing [19], in-situ thermal an-www.pss-c.com nealing [20], and face-to-face annealing [21], were applied and their influence on structural, optical, morphological, and electrical properties of pure ZnO was revealed [22][23][24]. Also, several studies have focused on the influence of post-deposition annealing on the properties of polycrystalline ZnO, doped by In [25], As [26], Ni [27], Ag [28], Cu [29], Mg [30].…”

Heteroepitaxy and nitrogen doping of high-quality ZnO

“…After cleaning the GaN on sapphire template, the reactor was heated to 450 1C under hydrogen and a $400 nm thick ZnO buffer was grown using DMZn and tertiarybutanol. After this the reactor was heated to 900 1C under nitrogen in a mixture of tertiarybutanol and N 2 O. ZnO growth was continued after a surface smoothening annealing step [29] with N 2 O and DMZn [20]. For doping with nitrogen ammonia [10], NO [8] and unsymmetrical-dimethyl-hydrazine (UDMHy) with molar flows of up to 0.44 mmol/min, 3.34 mmol/min, and 94 mmol/min were used, respectively.…”