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Plas, Dirk Van der

doi:10.1163/9789004378742_014

Cited by 2 publications

(2 citation statements)

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“…Although their thickness is often reduced to a few nanometers, their outstanding chemical and physical properties remain, mainly due to a highly optimized preparation process enabling the formation of pure and dense layers that fit perfectly on the silicon (Si) substrate without incorporating excessive stress at the interface. [4] Key properties of amorphous SiO 2 are: melting point 1600 C, density 2.2 g/cm 3 , diffraction index 1.46, relative dielectric constant 3.8±3.9, infrared absorption band 9.3 lm, minimal band gap 8 eV, electric resistance at room temperature 10 14 ±10 16 X cm, electric resistance at 500 C 10 13 X cm, etch rate in 10:1 NH 4 /HF 100 nm/min.…”

Section: Introductionmentioning

confidence: 99%

Nitridation of Silicon Oxide Layers Studied with Ion Beam Analysis on the Nanometer Scale

Markwitz

White²

2001

Adv. Mater.

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Ion beam analysis (IBA) on the nanometer scale using the time‐of‐flight heavy‐ion elastic recoil detection analysis technique reveals changes in the elemental composition (depth profiling) of high‐temperature nitrided thin silicon oxide (SiO2) layers formed on wafer silicon. An increased uptake of nitrogen with both increased temperature and surprisingly increased thickness of the thin SiO2 layers has been measured. The initial stage of nitridation could be illuminated, indicating the formation of silicon oxynitride subject to nitridation parameters. Previous surface topology investigations with scanning electron microscopy (SEM) revealed concentric annular artificial patterns at the surfaces of specially prepared specimens.

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Section: Introductionmentioning

confidence: 99%

Nitridation of Silicon Oxide Layers Studied with Ion Beam Analysis on the Nanometer Scale

Markwitz

White²

2001

Adv. Mater.

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“…It was professor van der Plas who made a breakthrough in this field. He has demonstrated that potassium permanganate can be used as a very nice acceptor of the hydride ion and with this oxidant the Chichibabin reaction smoothly proceeds even at low temperature, for instance in liquid ammonia [4] (reviews: [5][6][7]). Thus, pyridazine under these conditions is converted into 4-aminoderivative in excellent yield [4].…”

mentioning

confidence: 99%