Nitridation of Silicon Oxide Layers Studied with Ion Beam Analysis on the Nanometer Scale

Markwitz, A.; White, G. V.

doi:10.1002/1521-4095(200107)13:12/13<1027::aid-adma1027>3.0.co;2-s

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…RBS is a well-known technique to evaluate the composition of material surfaces down to the nanoscale [21,22]. RBS measurements were carried out using the 3 MV Van de Graaff accelerator at GNS Science.…”

Section: Characterizationsmentioning

confidence: 99%

“…In addition, EBA is observed to be more efficient than FA for similar temperatures and annealing times in terms of crystalline ordering and nanocluster growth. This could be explained by e-beam enhanced diffusion [21], which could lead to faster reorganization of Fe in the material due to a greater mobility of Fe atoms in the matrix. As pictured in figure 4 the differences observed between FA and EBA samples come from the surface etching and enhanced crystallization under e-beam irradiation.…”

Section: Proposed Growth Mechanismmentioning

confidence: 99%

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Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing

et al. 2011

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Magnetic nanoclusters have novel applications as magnetic sensors, spintronic and biomedical devices, as well as applications in more traditional materials such as high-density magnetic storage media and high performance permanent magnets. We describe a new synthesis protocol which combines the advantages of ion implantation and electron beam annealing (EBA) to produce surface iron nanoclusters. We compare the structure, composition and magnetic properties of iron nanoclusters fabricated by low dose 15 keV Fe implantation into SiO(2) followed by 1000 °C EBA or furnace annealing. Atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) images together with superconducting quantum interference device (SQUID) magnetometry measurements show that only EBA leads to the rapid formation of surface crystalline Fe spherical nanoclusters, showing magnetic moments per Fe atom comparable to that of bulk bcc Fe and superparamagnetic properties. We propose a fabrication mechanism which includes e-beam enhanced desorption of SiO(2). This method has potential for fabricating nanoscale magnetic sensors integrated in microelectronic devices.

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Section: Characterizationsmentioning

confidence: 99%

Section: Proposed Growth Mechanismmentioning

confidence: 99%

Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing

et al. 2011

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“…[1][2][3][4][5] Over the last few years, our group has been involved in several research projects related to the production and characterization of various advanced materials. We have used IBA techniques to successfully characterize many advanced material thin films prepared by different conventional techniques: synthesis of thin silicon nitride and oxide films prepared by nitridation and oxidation techniques, 6 stoichiometric and depth profile analysis of Heusler thin films prepared by pulsed laser deposition, 7 multilayered superconducting thin films of Ta x Ge 1)x alloys, 8 elemental analysis of prefired and fully reacted superconducting thin films (Y 1 B 2 C 3 O 7)x ) prepared by the inexpensive sol-gel method, 9 and helium ion implantation to create surface-near nanoporous cavity structures in titanium and titanium alloys for biomedical applications and their uptake of light elements such as oxygen. 10 In the last few years, significant progress has been made in the growth of group III-nitride family (GaN, InN, InGaN, and GaMnN) and zinc oxide (ZnO) semiconductor thin films due to their great importance for various photoelectronic devices such as blue, violet, and near ultraviolet LEDs and laser diodes.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

Kennedy

Markwitz

Trodahl

et al. 2007

Journal of Elec Materi

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The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.

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Depth profiling of light elements in PAMBE‐grown GaN and helium‐implanted titanium with heavy ion time‐of‐flight elastic recoil detection

Markwitz

Kennedy

Durbin

et al. 2004

Surface & Interface Analysis

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The heavy ion time-of-flight elastic recoil detection analysis (HI-ERDA) technique was used to investigate the possibility of measuring near-surface elemental depth profiles of light and mid-Z elements in thin films of plasma-assisted molecular beam epitaxy (PAMBE)-grown GaN and helium-implanted titanium. The great advantage of HI-ERDA is the ability to measure mass-separated elemental depth profiles simultaneously. However for some materials it is not certain whether HI-ERDA can be used successfully because significant sputtering or other beam-induced damage may occur. The damage to the surfaces by a 77 MeV iodine beam was assessed using RBS, AFM and profilometry. The results show that for thin PAMBE-grown polycrystalline GaN films and for titanium that has been heavily implanted with helium a significant modification of the near-surface region is caused by the probing heavy ion beam. For the PAMBE-grown GaN films the most significant loss trend is observed for nitrogen. Surprisingly this was not accompanied by a change in surface topology. In contrast, an almost complete removal of the heavily helium-implanted surface layer was measured for the titanium specimens. The investigation shows that reference measurements with additional techniques such as RBS, AFM and profilometry have to be performed to ascertain sample integrity before HI-ERDA data can be used.

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Nitridation of Silicon Oxide Layers Studied with Ion Beam Analysis on the Nanometer Scale

Cited by 6 publications

References 5 publications

Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing

Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing

Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films

Depth profiling of light elements in PAMBE‐grown GaN and helium‐implanted titanium with heavy ion time‐of‐flight elastic recoil detection

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