Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone Klesko, Joseph P.; Bellow, James A.; Saly, Mark J.; Winter, Charles H.; Julin, Jaakko; Sajavaara, Timo Klesko, J. P., Bellow, J. A., Saly, M. J., Winter, C. H., Julin, J., & Sajavaara, T. (2016 C. The growth rate for the cobalt borate process was 0.39-0.42 Å /cycle at 325 C. X-ray diffraction of the as-deposited films indicated that they were amorphous. Atomic force microscopy of 35-36 nm thick manganese borate films grown within the 300-350 C ALD window showed root mean square surface roughnesses of 0.4-0.6 nm. Film stoichiometries were assessed by x-ray photoelectron spectroscopy and time of flight-elastic recoil detection analysis. The differing film stoichiometries obtained from the very similar precursors MnTp 2 and CoTp 2 are proposed to arise from the oxidizing ability of the intermediate high valent manganese oxide layers and lack thereof for cobalt.