2020 IEEE International Ultrasonics Symposium (IUS) 2020
DOI: 10.1109/ius46767.2020.9251654
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Lithium niobate film bulk acoustic wave resonator for sub-6 GHz filters

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Cited by 34 publications
(12 citation statements)
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“…Recent development in 2D piezoelectric materials clearly demonstrate that 3R‐MoS 2 is capable of maintaining its piezoelectricity for the thickness of a few tens of nanometers. [ 36,68 ] Compared to the resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups since 2000 [ 2,4,43–65 ] as shown in Figure , the 3R‐MoS 2 SMR developed in this study has the highest fundamental resonant frequency and the highest electromechanical coupling coefficient to the best of our knowledge. These results suggest that utilization of 2D 3R‐MoS 2 flakes for FBAR devices could be a feasible way‐out strategy to achieve higher operation frequencies.…”
Section: Resultsmentioning
confidence: 62%
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“…Recent development in 2D piezoelectric materials clearly demonstrate that 3R‐MoS 2 is capable of maintaining its piezoelectricity for the thickness of a few tens of nanometers. [ 36,68 ] Compared to the resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups since 2000 [ 2,4,43–65 ] as shown in Figure , the 3R‐MoS 2 SMR developed in this study has the highest fundamental resonant frequency and the highest electromechanical coupling coefficient to the best of our knowledge. These results suggest that utilization of 2D 3R‐MoS 2 flakes for FBAR devices could be a feasible way‐out strategy to achieve higher operation frequencies.…”
Section: Resultsmentioning
confidence: 62%
“…Resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups and this work. [ 2,4,43–65 ] …”
Section: Resultsmentioning
confidence: 99%
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“…The 510 nm 128°Y-cut LiNbO 3 thin film, which was thinned down from a single-crystal wafer and transferred onto a 4-inch silicon (Si) wafer, was provided by NGK Insulators, Ltd. 29 . Such films retain high crystallinity and bulk material properties 45 . The release window was defined by electron beam lithography (EBL) and plasma etching.…”
Section: Device Fabricationmentioning
confidence: 99%
“…In recent years, new materials such as LiNbO 3 [ 11 ] and AlScN [ 12 ] have come into play, offering good prospects for increasing piezoelectric activity to achieve broader bandwidths. Despite its very large electromechanical coupling factor, LiNbO 3 poses serious manufacturing challenges when it comes to integrating it into acoustic resonators, mainly due the difficulty of growing LiNbO 3 thin films with good crystalline properties at temperatures compatible with ongoing resonator technologies [ 13 , 14 , 15 ].…”
Section: Introductionmentioning
confidence: 99%