Lithographic Properties of Poly(<i>tert</i>-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools

Gabor, Allen H.; Pruette, and Laura C.; Ober, Christopher K.

doi:10.1021/cm9600135

Cited by 32 publications

(23 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Cyclohexane is a solvent for PDMS and a nonsolvent for PS. 5,6 Therefore, the fact that the copolymer was soluble in cyclohexane shows that PDMS successfully was attached to the PS. In contrast, bromobenzene is a good solvent for PS and a non-solvent for PDMS.…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

“…These data are consistent with PDMS, which is not soluble in bromobenzene. 5,6 The bromobenzene solution was precipitated into methanol. The product was dried in a vacuum oven at 50°C to give a 66.6% yield (0.8 g) of PDMS-PS-PDMS triblock copolymer (M w /M n ϭ 101/52 kDa).…”

Section: Synthesis Of Triblock Pdms-ps-pdms (Iv) By the Acid-catalyzementioning

confidence: 99%

“…Their thermoplastic elastomeric properties, 2,3 periodic phase-separated morphologies, 2,4 and potential resistance to oxygen-reactive ion etching have been studied. 5 PS-PDMS block copolymers have been synthesized by a number of different methods. PDMS-PS-PDMS soft-hard-soft triblock copolymers have been prepared by the anionic polymerization of octamethylcyclotetrasiloxane (D 4 ) 5 or hexamethylcyclotrisiloxane (D 3 ) 6,7 initiated by the ␣,-living anionic ends of PS.…”

Section: Introductionmentioning

confidence: 99%

“…5 PS-PDMS block copolymers have been synthesized by a number of different methods. PDMS-PS-PDMS soft-hard-soft triblock copolymers have been prepared by the anionic polymerization of octamethylcyclotetrasiloxane (D 4 ) 5 or hexamethylcyclotrisiloxane (D 3 ) 6,7 initiated by the ␣,-living anionic ends of PS. PS-PDMS multiblock copolymers also have been prepared by Ptcatalyzed hydrosilylation reactions of ␣,-bis(SiO H)polysiloxanes with ␣,-bis(vinyl)polystyrene.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Novel synthesis of triblock PDMS-PS-PDMS copolymers

Sargent

Weber

2000

J. Polym. Sci. A Polym. Chem.

View full text Add to dashboard Cite

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

Section: Synthesis Of Triblock Pdms-ps-pdms (Iv) By the Acid-catalyzementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Novel synthesis of triblock PDMS-PS-PDMS copolymers

Sargent

Weber

2000

J. Polym. Sci. A Polym. Chem.

View full text Add to dashboard Cite

“…For 193 nm lithography, Gabor et al 4,5 focused on block and random copolymers using tert-butyl methacrylate (t-BMA) and a siloxane tertbutyl methacrylate [3-(methacryloxy)propyl] pentamethyldisiloxane ( Figure 1a). They showed that block copolymers develop better in aqueous base than the corresponding random copolymers because of the higher percentage of the tert-butyl units that are cleaved in block copolymers and also because they can potentially develop in a micellar manner, where only one block needs to be soluble in the aqueous base.…”

Section: Polymer Resists For 193 Nm Lithographymentioning

confidence: 99%

In pursuit of Moore’s Law: polymer chemistry in action

Kosma

Giannelis³

et al. 2017

Polym J

View full text Add to dashboard Cite

We present a focused review of photoresist strategies that have been studied over the past few decades driven by the demands of Moore's law. Selected results are discussed with emphasis on the choice of photoresist chemistry depending on the particulars of each radiation type or patterning strategy, while we present special architectures of photoresists that have attracted a great interest in the semiconductor field. We adopt an approach that allows for easy comparison between the different photoresist categories and we include brief discussions of a number of important preparation and property issues pertaining to key characteristics affecting resist performance. Polymer Journal (2018) 50, 45-55; doi:10.1038/pj.2017.64; published online 1 November 2017Photoresists are a workhorse tool for the semiconductor industry; they enable creation of small-scale structures using continuously evolving strategies to form objects of the nanoscale dimensions are needed to stay on the technology path of Moore's law. Simply put, photoresists transfer information using a light-driven process that makes them (often a polymer) either more or less soluble in the exposed region of the film. As dimensions have changed, so too have the chemistry and materials sets used in lithography. Originally requiring critical features of microns, photoresists such as cyclized polyisoprene were used. 1 Subsequently, novolac photoresists were developed and formed a water-soluble exposed material, avoiding the need for organic solvents that swelled the photoresist during development while operating at a shorter wavelength than prior resists, thus enabling smaller, more uniform features. 2 The creation of novolac resists set up a trend in photoresist design: a water developable material, working at a shorter and shorter wavelength to enable a finer feature size and adjusted composition to maintain sufficient transparency for pattern formation. This approach has carried forward through several generations of photoresists built around the principle of chemical amplification.A team of researchers with expertise in photoresists, polymersupported chemistry and protein synthesis worked at the IBM Almaden Research (San Jose, CA, USA) to tackle a new challenge in photolithography: to develop a photoresist that needed very little radiation to cause the solubility change needed during the patterning step. 3 Their concern was that the mercury light source being used to create UV radiation was increasingly weak as shorter wavelengths were used. Hence, a new process was needed that made better use of the imaging radiation.By using acid catalysis driven by a proton created in a light-induced decomposition of a photoacid generator, a single photon was shown to initiate hundreds of reactions. The resulting chemical amplification caused by that single photon was shown to overcome the limited radiation present in light sources of the time. However, the process also did something else arguably more important; it enabled a solubility change from the oil-soluble polymer ...

show abstract

Organic–Inorganic Nanocomposites: Unique Resists for Nanolithography

Gonsalves

Merhari²,

et al. 2001

Adv. Mater.

110

View full text Add to dashboard Cite

Ultra large‐scale integration (ULSI) should lead to 100 nm production circuits by 2006 as predicted by the Semiconductor Industry Association (SIA). For sub‐100 nm lithography it is desirable to synthesize higher performance and higher contrast resists. An optimum combination of high contrast necessary for sub‐100 nm resolution, high sensitivity for high throughput can be achieved by carefully engineering organic–inorganic nanocomposites, acting as optimum resists for a given lithographic process. This review outlines emerging approaches towards the achievement of these goals. A section also highlights selected state‐of‐the‐art organic resists. Nanocomposite resists for sub‐100 nm features have included the incorporation of fullerene C60 in a commercial resist ZEP520 (see Figure). Alternatively, nanoscale silica particles were incorporated in the polymer backbone as covalently bonded pendant clusters. The dispersion of 8–10 nm silica particles in a chemically amplified resist has also been reported. In all these approaches, a higher softening temperature (Tg) and increased rigidity, due to increased density of the film resulted. Higher etch resistance as well as increased mechanical properties and also enhanced resist performance for nanometer pattern fabrication have been obtained in these nanocomposites. Alternative approaches to conventional lithography, based on self‐assembled nanostructures, incorporating inorganic features as well as nanoimprinting via silicon polymer precursors, are also discussed.

show abstract

Lithographic Properties of Poly(tert-butyl methacrylate)-Based Block and Random Copolymer Resists Designed for 193 nm Wavelength Exposure Tools

Cited by 32 publications

References 23 publications

Novel synthesis of triblock PDMS-PS-PDMS copolymers

Novel synthesis of triblock PDMS-PS-PDMS copolymers

In pursuit of Moore’s Law: polymer chemistry in action

Organic–Inorganic Nanocomposites: Unique Resists for Nanolithography

Contact Info

Product

Resources

About