Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

Fukuda, Ryosuke; Balasubramanian, Priyadharshini; Higashimata, Itaru; Koike, Godai; Okada, T.; Kagami, Risa; Teraji, Tokuyuki; Onoda, Shinobu; Haruyama, Moriyoshi; Yamada, K.; Inaba, Masafumi; Yamano, Hayate; Stürner, Felix M.; McGuinness, Liam P.; Jelezko, Fedor; Ohshima, Takeshi; Shinada, Tetsuro; Kawarada, Hiroshi; Kada, Wataru; Hanaizumi, Osamu; Takenaka, Takashi; Isoya, Junichi

doi:10.1088/1367-2630/aad997

Cited by 22 publications

(38 citation statements)

References 41 publications

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“…In 2005, in-plane targeting was achieved via focusing ion beam implantation 16–19 , while a beam diameter of 100 nm was achieved in 2013 16 in mask-less implantation using a focused ion beam. The collimated ion implantation via nanometre-sized hole gives a much higher positioning resolution 20–29 . For example, Toyli et al demonstrated the fine grid of NV centres by nitrogen implantation via a nanohole in 2010 23 .…”

Section: Introductionmentioning

confidence: 99%

“…However, there is still room to improve the separation distance and coherence time owing to fabricate coherently coupled NV centres by this technique. The implantation via a nanohole on a poly (methyl methacrylate) (PMMA) resist mask fabricated by electron beam lithography is commonly utilized for accurately positioning NV centres as of today 24–29 . The in-plane accuracy is determined by the nanohole diameter as well as by straggling.…”

Section: Introductionmentioning

confidence: 99%

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Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

et al. 2019

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Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C 5 N 4 H n from an adenine ion source to achieve further scaling. Because the C 5 N 4 H n ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

et al. 2019

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“…We conjecture thermal and electrical drifts as well as mechanical vibrations as major source of beam pointing fluctuations. d) Focus spot determination of nitrogen molecular ions yielding σ = 121 (35) nm in x-direction. The measuring time for the extraction of 289 nitrogen ions takes about 117 min, which results in a loading rate of 2.5 ions/min.…”

Section: Sample Preparation and Implantationmentioning

confidence: 99%

Fabrication of $^{15}\textrm{NV}^{-}$ centers in diamond using a deterministic single ion implanter

Groot-Berning,

Jacob,

Osterkamp

et al. 2021

Preprint

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Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation using a deterministic single ion source. For this we sympathetically laser-cool single 15 N + 2 molecular ions in a Paul trap and extract them at an energy of 5.9 keV. Subsequently the ions are focused with a lateral resolution of 121(35) nm and are implanted into a diamond substrate without any spatial filtering by apertures or masks. After high-temperature annealing, we detect the NV centers in a confocal microscope and determine a conversion efficiency of about 0.6 %. The 15 NV centers are characterized by optically detected magnetic resonance (ODMR) on the hyperfine transition and coherence time.

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“…However, these approaches require a sophisticated fabrication process for materials with high hardness such as diamond, and the nanoscale devices often aggravate decoherence of optical and spin qubits [17][18][19]. Furthermore, to precisely couple the defects with photonic structures at the maximum optical mode, the lithography with patterned masks or siteselective generation of defects are required [20,21].…”

Section: Introductionmentioning

confidence: 99%

High-Resolution, High-Contrast Optical Interface for Defect Qubits

Moon

Lee

et al. 2021

ACS Photonics

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Point defects in crystals provide important building blocks for quantum applications. Since we optically address these defect qubits, having an efficient optical interface is a highly important aspect. However, conventional confocal fluorescence microscopy of high-refractive-index crystals suffers from limited photon collection efficiency and spatial resolution. Here, we demonstrate high-resolution, high-contrast imaging of defects in diamonds using microsphere-assisted confocal microscopy. A microsphere provides an excellent optical interface for point defects with a magnified virtual image that increases the spatial resolution up to λ/5, as well as the optical signal-to-noise ratio by four times. These features enable individual optical addressing of single photons and single spins of multiple defects that are spatially unresolved in conventional confocal microscopy, with improved signal contrast. Combined with optical tweezers, this system also demonstrates the possibility of positioning or scanning the microspheres. The approach does not require any complicated fabrication or additional optical systems, but uses simple, off-the-shelf micro-optics. From these distinctive advantages of microspheres, our approach provides an efficient way to image and address closely spaced defects with much better resolution and sensitivity.

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Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

Cited by 22 publications

References 41 publications

Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

Fabrication of $^{15}\textrm{NV}^{-}$ centers in diamond using a deterministic single ion implanter

High-Resolution, High-Contrast Optical Interface for Defect Qubits

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