Lithography challenges of dual-damascence process in 0.13 μm era

Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressureThis article studies the resolution enhancement for sub-120 nm isolated trench patterns using alternating phase shifted scattering bars. Through simulation, we found that three sets of 40 nm alternating phase shifted scattering bars with separation of 120 nm are the best aerial image provider in terms of higher peak intensity, lower side lobe intensity, and smaller full width of half maxima. Simulation results are verified experimentally, and we achieved isolated trench at patterned critical dimension ͑CD͒ target of 120 nm± 10% with manufacturability process window for nominal design CD of 125 nm. The patterned CD target 120 nm corresponds to k 1 factor of 0.33 for exposing wavelength of 248 nm, sigma of 0.31, and maximum numerical aperture ͑NA͒ of 0.68. Three sets of alternating phase shifted scattering bars showed good mask linearity up to 115 nm nominal design CD. We compared isolated trench process condition with dense patterns. Our experimental results show that both isolated and dense patterns can be printed at the same process condition.

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Lithography challenges of dual-damascence process in 0.13 μm era

Cited by 2 publications

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Fabrication and characterization of copper interconnects of line-width down to 100nm using a specially designed phase shift mask

Fabrication and characterization of copper interconnects of line-width down to 100nm using a specially designed phase shift mask

Alternating phase shifted scattering bars for low k1 trench pattering

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