(lnP)₅/(Ga_0.47In_0.53As)₅ superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.

Abstract

Room temperature laser emission near 1.55 µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340 • C by solid source Atomic Layer Molecular Beam Epitaxy , where (lnP) 5 /(Ga 0.47 In 0.53 As) 5 , lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga 0.27 In 0.73 As wells. These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.

50th anniversary of the laser

“…On July, 7,1960 a press conference at Huyghes announced that Maiman had assembled and put into operation the first laser. It was the very pulsed ruby laser that everybody knows today.…”

“…Coherence and the statistical properties of laser light were much studied and we have two exceptional papers by Roy Pike [5] and Jan Perina [6] discussing these arguments. The issue also contains three more papers presenting some earlier achievements in the construction of multiquantumwell laser (M. L. Dotor, P. Huertas, P. A. Postigo, D. Golmayo and F. Briones) [7], the first measurements on very short pulses (H. P. Weber and R. Dändliker) [8] and spatial coherence (D. P. Barato and M. L. Calvo) [9].…”