The electrical and optical properties of undoped InP layers grown at low temperatures by solid source atomic layer molecular beam epitaxy are investigated. Phosphorus surface coverage during epitaxy is controlled by monitoring the evolution of reflection high-energy electron diffraction pattern during growth. An accurate phosphorus supply by means of a valved cracking phosphorus cell is employed. The relation between phosphorus incorporation and the electronic properties of the epilayers is examined, and it is found that, at a substrate temperature of 340 °C, residual electron concentration increases linearly with phosphorus flux. Residual doping of InP layers grown at 340 °C has been reduced down to 1×1016 cm−3, and Hall mobilities of 3260 cm2/V s at 300 K and 14 830 cm2/V s at 65 K are reported. Low-temperature photoluminescence of low background doping layers is dominated by near band transitions.

(InP)n/(Ga0.47In0.53As)m lattice-matched short-period superlattices have been used as pseudoquaternary material to confine Ga0.47In0.53As multiquantum wells in a GaxIn1−xAs/GaxIn1−xAsyP1−y/InP heterostructure. The samples have been grown by low-temperature atomic layer molecular beam epitaxy, using fast operating valved solid sources to generate P2 and As4 beams. X-ray diffraction was used to assess the structural quality of the samples. The effect of the superlattice period on the pseudoquaternary band gap is reported. Room-temperature photoluminescence wavelength of the multiquantum well structure is close to 1.55 μm. Growing short-period superlattices results in a much easier method to control band-gap energy than growing alternative quaternary material.

No abstract

No abstract

Room temperature laser emission near 1.55 µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340 • C by solid source Atomic Layer Molecular Beam Epitaxy , where (lnP) 5 /(Ga 0.47 In 0.53 As) 5 , lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga 0.27 In 0.73 As wells. These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.