2011 Workshop on Fault Diagnosis and Tolerance in Cryptography 2011
DOI: 10.1109/fdtc.2011.18
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Local and Direct EM Injection of Power Into CMOS Integrated Circuits

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Cited by 37 publications
(21 citation statements)
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“…Many information mentioned in this section refer to Dehbaoui et al(2012) and Poucheret et al (2011).…”
Section: Em Cartographymentioning
confidence: 99%
See 1 more Smart Citation
“…Many information mentioned in this section refer to Dehbaoui et al(2012) and Poucheret et al (2011).…”
Section: Em Cartographymentioning
confidence: 99%
“…The minimum distance between the two clusters is equal to 214.2 µm. It is far beyond the displacement step of a typical EM campaign, which is of the order of tens of µm (for instance, 15 µm in Poucheret et al, 2011). This distance also determines a region that is significantly bigger than the sensitive area locally involved in an EM attack in [ µm ]…”
Section: Sign-off Power Analysis On a Cryptographic Circuit 31 Devimentioning
confidence: 99%
“…In [2], the authors have shown that with high frequency (1GHz) harmonic injection, it was possible to inject, locally into the chip, enough power into the power ground network to take control of an internal clock generator designed in 90nm. Additionally they have shown that the increase (up to 50%) of the frequency, Δf, of the internally generated clock signal was following the average supply voltage increase, ΔV, observed in presence of harmonic injection.…”
Section: A Ring Oscillatorsmentioning
confidence: 99%
“…Their ability to propagate through different materials is the most interesting one since it allows an attacker (without any preliminary preparation of the chip) to induce a very short glitch in the power supply voltage. This short glitch in the power supply voltage is the result of a coupling mechanism between the coil antenna and the targeted chip's Power Ground Network (pgn) [14,9].…”
Section: Electromagnetic Glitch Injection Techniquementioning
confidence: 99%