Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

Tsu, D. V.; Lucovsky, G.; Mantini, M. J.

doi:10.1103/physrevb.33.7069

Cited by 308 publications

(163 citation statements)

References 14 publications

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“…These features are characteristic of silicon nitride films and are attributed to Si-N stretching, N-H bending, Si breathing, and N-H stretching vibrations, respectively. 28 No Si-H bonds were detected, which is expected due to the high N/Si ratio of these samples ͑N/Si ϭ1.55͒.…”

Section: A Ftir Spectroscopymentioning

confidence: 99%

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Andrés

Prado

Martínez

et al. 2000

Journal of Applied Physics

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The effect of rapid thermal annealing processes on the properties of SiO 2.0 and SiN 1.55 films was studied. The films were deposited at room temperature from N 2 and SiH 4 gas mixtures, and N 2 , O 2 , and SiH 4 gas mixtures, respectively, using the electron cyclotron resonance technique. The films were characterized by Fourier transform infrared spectroscopy ͑FTIR͒ and electron paramagnetic resonance spectroscopy. According to the FTIR characterization, the SiO 2.0 films show continuous stress relaxation for annealing temperatures between 600 and 1000°C. The properties of the films annealed at 900-1000°C are comparable to those of thermally grown ones. The density of defects shows a minimum value for annealing temperatures around 300-400°C, which is tentatively attributed to the passivation of the well-known EЈ center Si dangling bonds due to the formation of Si-H bonds. A very low density of defects (5ϫ10 16 cm Ϫ3 ) is observed over the whole annealing temperature range. For the SiN 1.55 films, the highest structural order is achieved for annealing temperatures of 900°C. For higher temperatures, there is a significant release of H from N-H bonds without any subsequent Si-N bond healing, which results in degradation of the structural properties of the film. A minimum in the density of defects is observed for annealing temperatures of 600°C. The behavior of the density of defects is governed by the presence of non-bonded H and Si-H bonds below the IR detection limit.

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Section: A Ftir Spectroscopymentioning

confidence: 99%

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Andrés

Prado

Martínez

et al. 2000

Journal of Applied Physics

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show abstract

“…2,[6][7][8] Although NH 3 molecules dissociate and react readily with Si surfaces at 300 K or even colder, 4,9 stoichiometric Si 3 N 4 films cannot form until the sample temperature is raised above 850 K for hydrogen desorption and Si out diffusion to occur. 10,11 The physical properties of silicon nitride films grown on Si have been analyzed with x-ray and ultraviolet photoelectron spectroscopy, Auger electron spectroscopy ͑AES͒, and low-energy electron diffraction ͑LEED͒.…”

mentioning

confidence: 99%

CrystallineSi3N4thin films on Si(111) and the4×
Wang
¹
,
Zhai
²
,
Yang
³

et al. 1999
Phys. Rev. B
53
1
19
1
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“…related to Si-O rocking, Si-O bending, and Si-O stretching modes, respectively, were present in both SRO ilms [40,41]. The shoulder from ~1100 to ~1300 cm -1 observed in both SRO ilms has been atributed to Si-O stretching out of phase [42].…”

Section: Silicon-rich Oxide (Sro) Ilmmentioning

confidence: 77%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

show abstract

Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

Cited by 308 publications

References 14 publications

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

CrystallineSi3N4thin films on Si(111) and the4×
Wang
¹
,
Zhai
²
,
Yang
³

et al. 1999
Phys. Rev. B
53
1
19
1
View full text Add to dashboard Cite

Luminescent Devices Based on Silicon-Rich Dielectric Materials

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Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

Cited by 308 publications

References 14 publications

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

CrystallineSi3N4thin films on Si(111) and the4×Wang1, Zhai2, Yang3 et al. 1999Phys. Rev. B531191View full textAdd to dashboardCite

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Contact Info

Product

Resources

About

CrystallineSi3N4thin films on Si(111) and the4×
Wang
¹
,
Zhai
²
,
Yang
³

et al. 1999
Phys. Rev. B
53
1
19
1
View full text Add to dashboard Cite