Local Electronic Structure of Lithium-Doped ZnO Films Investigated by X-ray Absorption Near-Edge Spectroscopy

Tsai, Shih Chang; Hon, Min–Hsiung; Lu, Yang‐Ming

doi:10.1021/jp200815d

Cited by 14 publications

(9 citation statements)

References 26 publications

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“…First of all a preliminary investigation of the Zn K-edge was performed in order to understand if the addition of the Ni and Li dopants can have any influence on the average Zn local environment. For instance, some authors reported that Li doping induces a decrease in intensity of the second shell signal and a shortening of the Zn-Zn distance [29]. Considering Figure 1 and Table 1, we can see that in our samples the first and second shell interatomic distances are comparable to those reported in literature for undoped ZnO [29][30][31].…”

Section: Resultssupporting

confidence: 86%

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

Mino

Gianolio

Bardelli

et al. 2013

J. Phys.: Condens. Matter

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Ni doped, Li doped and (Li, Ni) codoped ZnO thin films were successfully grown using a pulsed laser deposition technique. Undoped and doped ZnO thin films were investigated using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES). Preliminary investigations on the Zn K-edge of the undoped and doped ZnO thin films revealed that doping has not influenced the average Zn-Zn bond length and Debye-Waller factor. This shows that both Ni and Li doping do not appreciably affect the average local environment of Zn. All the doped ZnO thin films exhibited more than 50% of substitutional Ni, with a maximum of 77% for 2% Ni and 2% Li doped ZnO thin film. The contribution of Ni metal to the EXAFS signal clearly reveals the presence of Ni clusters. The Ni-Ni distance in the Ni(0) nanoclusters, which are formed in the film, is shorter with respect to the reference Ni metal foil and the Debye-Waller factor is higher. Both facts perfectly reflect what is expected for metal nanoparticles. At the highest doping concentration (5%), the presence of Li favors the growth of a secondary NiO phase. Indeed, 2% Ni and 5% Li doped ZnO thin film shows %Nisub = 75 ± 11, %Nimet = 10 ± 8, %NiO = 15 ± 8. XANES studies further confirm that the substitutional Ni is more than 50% in all the samples. These results explain the observed magnetic properties.

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Section: Resultssupporting

confidence: 86%

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

Mino

Gianolio

Bardelli

et al. 2013

J. Phys.: Condens. Matter

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“…The reason for the stable p‐type ZnO via Li,N codoping method is not clear yet. It is anticipated that when Li is incorporated into ZnO films, both interstitial Li (Li i ) and Li substituted Zn (Li Zn ) will be formed, and Li i is a donor, while Li Zn is an acceptor in ZnO . While in Li,N codoped ZnO films, the Li i may be passivated by N, thus Li Zn act as effective acceptors in the films , and the activation energy for the Li Zn acceptors is about 90 meV .…”

Section: Resultsmentioning

confidence: 99%

Stable p‐type ZnO films obtained by lithium–nitrogen codoping method

Shen

Shan

Liu

et al. 2013

Physica Status Solidi (b)

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By employing lithium and nitrogen codoping method, p‐type zinc oxide (ZnO) films have been prepared, and the p‐type conduction can maintain for 207 days. ZnO p–n junctions have been constructed based on the p‐type ZnO. Under the drive of continuous current, obvious emission has been observed from the p–n junctions, and the ZnO p–n junction light‐emitting devices (LEDs) can still work after placing in air ambient for 180 days. Room temperature electroluminescence spectra of the p‐ZnO:(Li,N)/n‐ZnO structured LEDs under continuous current recorded intermittently for 180 days.

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“…During the growth progress, the substrate temperature was fixed at 650°C, and the pressure in the growth chamber at 2 10 −5 mbar. To fabricate source, and such a technique has been employed to study the local electronic structures of ZnO [18,19]. The current-voltage (I-V) properties of the devices were measured using a semiconductor parameter analyzer (Keithely 2200).…”

Section: Methodsmentioning

confidence: 99%

Photodetectors for weak-signal detection fabricated from ZnO:(Li,N) films

Zhou

Shen

et al. 2017

Applied Surface Science

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ZnO films with carrier concentration as low as 5.0×10 13 cm-3 have been prepared via a lithium and nitrogen codoping method, and ultraviolet photodetectors have been fabricated from the films. The photodetectors can be used to detect weak signals with power density as low as 20 nw/cm 2 , and the detectivity and noise equivalent power of the photodetector can reach 3.60×10 15 cmHz 1/2 /W and 6.67× 10-18 W-1 , respectively, both of which are amongst the best values ever reported for ZnO based photodetectors. The high-performance of the photodetector can be attributed to the relatively low carrier concentration of the ZnO:(Li,N) films.

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Local Electronic Structure of Lithium-Doped ZnO Films Investigated by X-ray Absorption Near-Edge Spectroscopy

Cited by 14 publications

References 26 publications

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

EXAFS and XANES investigation of (Li, Ni) codoped ZnO thin films grown by pulsed laser deposition

Stable p‐type ZnO films obtained by lithium–nitrogen codoping method

Photodetectors for weak-signal detection fabricated from ZnO:(Li,N) films

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