Local heat and mass transfer characteristics of different channel configurations in polysilicon chemical vapor deposition reactor

An, Lisha; Zhang, Ting; Lei, Xiangshu; Yang, Peng; Liu, Yingwen

doi:10.1016/j.solener.2019.12.059

Cited by 5 publications

(2 citation statements)

References 19 publications

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“…This information can be very valuable in choosing a suitable system for the reaction. The CVD process usually consists of the following five steps [92][93][94]:…”

Section: Kinetics Of Reactions and Coating Production In The Cvd Processmentioning

confidence: 99%

A Review on Sustainable Manufacturing of Ceramic-Based Thin Films by Chemical Vapor Deposition (CVD): Reactions Kinetics and the Deposition Mechanisms

et al. 2023

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Chemical vapor deposition (CVD) is a process that a solid is formed on a substrate by the chemical reaction in the vapor phase. Employing this technology, a wide range of materials, including ceramic nanocomposite coatings, dielectrics, and single crystalline silicon materials, can be coated on a variety of substrates. Among the factors influencing the design of a CVD system are the dimensions or geometry of the substrate, substrate temperature, chemical composition of the substrate, type of the deposition process, the temperature within the chamber, purity of the target material, and the economics of the production. Three major phenomena of surface reaction (kinetic), diffusion or mass transfer reaction, and desorption reaction are involved during the CVD process. Thermodynamically, CVD technology requires high temperatures and low pressures in most systems. Under such conditions, the Gibbs free energy of the chemical system quickly reaches its lowest value, resulting in the production of solids. The kinetic control of the CVD technology should always be used at low temperatures, and the diffusion control should be done at high temperatures. The coating in the CVD technology is deposited in the temperature range of 900–1400 °C. Overall, it is shown here that by controlling the temperature of the chamber and the purity of the precursors, together with the control of the flow rate of the precursors into the chamber, it is possible to partially control the deposition rate and the microstructure of the ceramic coatings during the CVD process.

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“…This information can be very valuable in choosing a suitable system for the reaction. The CVD process usually consists of the following five steps [92][93][94]:…”

Section: Kinetics Of Reactions and Coating Production In The Cvd Processmentioning

confidence: 99%

A Review on Sustainable Manufacturing of Ceramic-Based Thin Films by Chemical Vapor Deposition (CVD): Reactions Kinetics and the Deposition Mechanisms

et al. 2023

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“…Xiao et al [27] investigated the transport phenomenon in a Siemens reactor, and conducted a comparative analysis of four reactors featuring varying configurations of inlet nozzles and exhaust ports. Liu et al, [28,29] provided valuable insights into the design and optimization of CVD systems for polysilicon production. By manipulating the flow patterns and introducing obstacles, it is possible to enhance the local heat and mass transfer performance, ultimately improving the efficiency of the silicon CVD process.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Li,

Jiang

et al. 2024

Cryst. Res. Technol.

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Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high‐quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non‐uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane‐hydrogen (TCS‐H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non‐uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non‐uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non‐uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

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A review: the development of field synergy and its application to cooling exchangers in the hot-wet mining field

Zhang

et al. 2023

J Therm Anal Calorim

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Local heat and mass transfer characteristics of different channel configurations in polysilicon chemical vapor deposition reactor

Cited by 5 publications

References 19 publications

A Review on Sustainable Manufacturing of Ceramic-Based Thin Films by Chemical Vapor Deposition (CVD): Reactions Kinetics and the Deposition Mechanisms

A Review on Sustainable Manufacturing of Ceramic-Based Thin Films by Chemical Vapor Deposition (CVD): Reactions Kinetics and the Deposition Mechanisms

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

A review: the development of field synergy and its application to cooling exchangers in the hot-wet mining field

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