Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Gomila, Gabriel; Bulashenko, O. M.; Rubı́, J. M.

doi:10.1063/1.367024

Cited by 12 publications

(13 citation statements)

References 20 publications

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“…However, for devices where the spatial correlations between active regions of the device are weak, they have been proven to be effective. 19 To verify the validity of the equivalent noise circuit technique for a MOSFET, we split the channel into several parts ( Fig. 2(a)).…”

Section: A Equivalent Noise Circuit Methodsmentioning

confidence: 99%

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

2015

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Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

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Section: A Equivalent Noise Circuit Methodsmentioning

confidence: 99%

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

2015

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“…Microscopic approaches at hydrodynamic 3,4 and kinetic levels 5,6 confirm the above expression without resorting to two independent noise sources, but providing a selfconsistent solution of the dynamics together with the Poisson equation. However, a physical interpretation of the noise properties of SBD, and in particular of the crossover between shot and thermal noise, is still lacking in the current literature and constitutes an intriguing question.…”

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confidence: 66%

Shot-noise suppression in Schottky barrier diodes

Gomila

Reggiani

Rubı́

2000

Journal of Applied Physics

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We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices. © 2000 American Institute of Physics. ͓S0021-8979͑00͒03418-6͔It is well known that, in the absence of 1/f contributions, excess noise in Schottky barrier diodes ͑SBD͒ exhibits shot noise followed by thermal noise ͑neglecting hot-carrier effects͒.1,2 Shot noise is attributed to the presence of a barrier which controls the exponential increase of current with applied voltage. By contrast, the thermal behavior is attributed to the series resistance which controls the more or less linear increase of the current at the highest voltages. A phenomenological approach to describe the cross over from shot to thermal behaviors is to express the current spectral density, S I , as the partition between two noise generators as 1,2where Ī is the average electric current, q the electron charge, R j the junction resistance, R s the series resistance, k B Boltzmann's constants, and T the temperature. Microscopic approaches at hydrodynamic 3,4 and kinetic levels 5,6 confirm the above expression without resorting to two independent noise sources, but providing a selfconsistent solution of the dynamics together with the Poisson equation. However, a physical interpretation of the noise properties of SBD, and in particular of the crossover between shot and thermal noise, is still lacking in the current literature and constitutes an intriguing question.The aim of this article is to address this issue by showing that the crossover between shot and thermal noise behaviors represent the suppression due to long range Coulomb interaction of the otherwise full shot noise. This suppression occurs in SBD when the device passes from barrier to flatband conditions because of the following: By increasing the free carrier concentration the originally negligible screening effects due to the Coulomb interaction become relevant, thus acting as a shot noise suppressor. Accordingly, when controlled by screening effects carrier number fluctuations give a negligible contribution to the total noise power, which is now practically given by only the velocity fluctuations, thus providing thermal noise.The starting point of our approach is the nondegenerate fluctuating drift-diffusion equation which, for the case of one dimensional geometries and low frequencies, iswhere I is the instantaneous electric current, A th...

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“…15 Our work, then, offers new perspectives on what concerns the analysis of the local noise and the spatial correlations in devices with inhomogeneous distributions of field and charge concentration, like n ϩ nn ϩ diodes, Schottky barrier diodes, 10 fieldeffect transistors, etc. …”

Section: Discussionmentioning

confidence: 99%

“…In particular, application of this formalism to a Schottky contact will be published elsewhere. 10 The content is organized as follows. In Sec.…”

Section: K͑x͒dx ͑1͒mentioning

confidence: 99%

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

Bulashenko

Gomila

Rubı́

et al. 1998

Journal of Applied Physics

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We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n ϩ nn ϩ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration.

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Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Cited by 12 publications

References 20 publications

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Shot-noise suppression in Schottky barrier diodes

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

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