Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Abstract

The thermal resistance of a High Electron Mobility Transistor (HEMT) forming part of a Monolithic Microwave Integrated Circuit (MMIC) is non-invasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging. The HEMT thermal resistance considers the device local maximum temperature and dissipated power. An experimental approach to this end is currently not available, as the HEMTs thermal interaction does not allow extracting its individual heat generation. Thanks to thermal field confinement offered by heat source frequency modulation, the power dissipation in each device is inferred, making feasible its individual thermal resistance extraction. As a result, reasonable values of the local thermal resistance of each individual HEMT integrated in the MMIC (i.e., 57.8+3.4 °C/W and 24.8+1.4 °C/W) are obtained in agreement with studies on discrete devices available in the literature.

Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

“…The drawback is that they underestimate peak channel temperature due to averaging over the active device region [25], [26]. Optical measurements such as micro-Raman and infrared (IR) thermography [27]- [30] provide information on the surface temperature [18], [19], [31], [32], not the hotspots inside 2DEG buried below the gate of each HEMT. Moreover, spatial resolution limits optical measurements due to diffraction [33].…”

Accurate Estimation without Calibration of the Complex Relative Permittivity of Multilayer Dielectric Material based on the Finite Integration Technique

“…Multilayer dielectric material substrates are used in many practical applications, especially in high-speed circuits, such as the Microwave Integrated Circuits (MICs) [1,2], Monolithic Microwave Integrated Circuits (MMIC) [3][4][5][6], and wireless systems applications [7,8]. The exact knowledge of the individual layers in the multilayer substrate permittivity characterization is of great importance for MIC and MMIC design.…”

Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

“…In this scenario, non-invasive thermal imaging is emerging as a promising solution to expedite evaluations, avoid electrical couplings and reduce production costs. This approach has already demonstrated its effectiveness in various power industrial applications [18]- [22]. Specifically, thermal imaging has enhanced the lateral resolution, enabling local studies of proper system…”

“…operation in ICs [21]. It has also facilitated the extraction of local thermal resistance in Gallium Nitride transistors of Monolithic Microwave Integrated Circuits [22]. However, applying these techniques to power semiconductor devices under operation in energy conversion scenarios presents unique challenges.…”