1989
DOI: 10.1088/0268-1242/4/9/021
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Localised defect states in electron-irradiated Pb1-xSnxSe alloys

Abstract: The effect of pressure on the galvanomagnetic properties of electronirradiated n-Pb, , Sn, Se (0.07SxS0.125) has been investigated. The electron concentration as a function of pressure is used t o determine the parameters of the band of radiation-induced resonant states and t o reconstruct the energy spectrum of Pb,.Sn,Se alloys irradiated with electrons.

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Cited by 6 publications
(8 citation statements)
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“…At the same time under atmospheric pressure the hole mobility is equal to m p % 2 Â 10 2 cm 2 aVs. Such low values have been earlier observed in the insulator phase of electron-irradiated Pb 1Àx Sn x Se x 0X125Y 0X25 [5] and have been attributed to the conductivity through the radiation defect band located within the forbidden band.…”
Section: Resultssupporting
confidence: 61%
See 1 more Smart Citation
“…At the same time under atmospheric pressure the hole mobility is equal to m p % 2 Â 10 2 cm 2 aVs. Such low values have been earlier observed in the insulator phase of electron-irradiated Pb 1Àx Sn x Se x 0X125Y 0X25 [5] and have been attributed to the conductivity through the radiation defect band located within the forbidden band.…”
Section: Resultssupporting
confidence: 61%
“…These values are about an order smaller than those typical of the band conductivity. Nevertheless, they are too large for the conductivity through localized states in irradiated Pb 1Àx Sn x Se alloys [5] and appear to be responsible for surface conductivity of electron type [3]. In this case the behavior of the electron conductivity s n under pressure indicates probably a noticeable decrease in the electron concentration in the surface layer of the irradiated crystals under pressure.…”
Section: Resultsmentioning
confidence: 95%
“…Thus, the parameters of the E t1 radiation defect band are quite comparable with those of the E t band [2][3][4][5]. However, the precision of the determination of model parameters in our case is much lower.…”
Section: Pressure Dependence Of Hole Concentration and Main Parameter...mentioning
confidence: 56%
“…The main parameters of the radiation defect band E t (i.e. the rate of defect generation, energy position and the width of the band) are well known over practically the entire range of the existence of cubic phase of the alloys (0.07 ≤ x ≤ 0.34) [2][3][4][5]. At the same time the information about the E t1 level is insufficient at present [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…This seems surprising since, according to our previous data [3], in Pb, _&, Se alloys with x < 0.19 the irradiation-induced band of localized defect states should be situated in the conduction band. One can suppose that irradiation generates two different types of defect and leads to the appearance of two bands of localized defect states in the energy spectrum of Pb, _,Sn,Se (figure 5).…”
Section: Resultsmentioning
confidence: 74%