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Butov, L. V.; Kulakovskiǐ, V. D.; Andersson, Thomas; Zg, Chen

doi:10.1103/physrevb.42.9472

Cited by 18 publications

(8 citation statements)

References 21 publications

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“…is the reduced mass. The electron effective mass is derived to be of m e * = (0.068 ± 0.003)m 0 (m 0 is the free electron mass), close to the value determined by Butov et al [34], but typically higher of that determined from the Shubnikov-de-Haas measurements.…”

Section: B Pl In Magnetic Fieldsupporting

confidence: 81%

“…This deviation observed at low temperature is immediately connected with fluctuations of the local potential energy in the quantum well. According to Butov et al [34] at low excitation densities and low temperatures, the photoexcited holes occupy predominantly the low-energy states within the broadened Landau levels, and the transition energy is smaller than the gap between the corresponding electron and hole LL. The width of the n-th LL, Γ n , is determined by both magnitude of the fluctuations and their sizes.…”

Section: B Pl In Magnetic Fieldmentioning

confidence: 98%

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Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects

Masselink¹

2000

Semicond. Phys. Quantum Electron. Optoelectron.

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Photoluminescence (PL) study of pseudomorphic heavily modulation-doped Al x Ga 1-x As/In y Ga 1-y As/GaAs heterostructures shows fundamental changes in the PL spectrum under excitation pumping and/or temperature increase. In most the high and low energy tails of the PL feature undergo the principal transformations. High-energy tail peculiarities are related to the repelling of the Fermi-edge singularity (FES) and the excitonic states. The character of repelling depends crucially on the excitation density and/or temperature. At low temperature the origination of the FES feature has been observed for the first time under increasing the excitation density. The FES appearance is accompanied by the formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed, resulting in the 2D electron gas-heavy hole recombination for the second electron subband. The many-body feature is detected in the magnetoluminescence spectrum. This feature develops in magnetic field B = 7 T at low temperature (T = 4.2 K) and is surely detected up to T ≈ 50 K. The LO-phonon side bands for the parent transitions between the Landau levels (LLs) are revealed in the low-energy tail of the PL spectra in magnetic field. The evolution of these phonon side-band with temperature and excitation density is observed. The enhanced strength of phonon side-bands is attributed to an enhanced Frohlich coupling with account of confined phonon and interface modes.

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Section: B Pl In Magnetic Fieldsupporting

confidence: 81%

Section: B Pl In Magnetic Fieldmentioning

confidence: 98%

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects

Masselink¹

2000

Semicond. Phys. Quantum Electron. Optoelectron.

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“…[38]. One can see that simultaneously with the depletion of the electron LLs at high B an increase of the LL linewidth at even ν takes place (Fig.…”

Section: Introductionmentioning

confidence: 82%

“…Such nonlinearities of j j E -at even values of ν were explained by the many-body effects [37]. From linear fits of j j E -one can find the reduced transition mass as was found in [38] for InGaAs/GaAs QWs with In content 0 13 0 18,…”

Section: Introductionmentioning

confidence: 91%

Electrical spin‐injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

Zaı̆tsev

Дорохин²,

Demina³

et al. 2009

Physica Status Solidi (b)

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The electroluminescence of Schottky diodes with a composite ferromagnetic contact Au/Co/Au and a near‐surface InGaAs/GaAs quantum well (QW) have been studied in magnetic fields B = 0 – 10 T and low temperature T ∼ 2 K. The emission band due to recombination of the electrically injected holes with a two‐dimensional electron gas (2DEG) in the QW shows values of a circular polarization degree PC significantly higher than that in the reference nonmagnetic Au/GaAs diode, thus evidencing efficient spin injection. The nonmonotonic behavior of PC(B) at high B correlates with a filling of the Landau levels and is attributed to the nonlinear screening of a random potential by the 2DEG. The systematic decrease of PC with increasing of the QW distance dC from the contact allows to estimate the hole transport spin‐scattering length lS ∼ 90 nm at a doping level ∼1017 cm–3. Different factors of hole spin depolarization are revealed and discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In discussing the spatial randomness, three kinds of disorder source are to be considered. 21,22 One is the electrostatic random potential V remote as mentioned above. Although V remote affects the 2DEG state and depends strongly on the electron density, the contribution of V remote to the PL emission energy is small in our sample because the spatial length scale of this fluctuation s(= 250 nm) is much larger than the X − radius and the random energy shift cancels out in the emission energy after the electron-hole recombination.…”

mentioning

confidence: 99%

Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas

et al. 2013

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By measuring the photoluminescence linewidth of a GaAs quantum well under perpendicular electric fields, we have traced the variation of the effective radius a * of a charged exciton (trion) as a function of electron density. The a * increases sharply above a critical density n s = 2 × 10 14 m −2 , which is consistent with the decrease of the screening length predicted by nonlinear-screening theory. Our analysis shows that the crossover from trions to the two-dimensional electron gas plus hole is generated by Coulomb screening in the high-electron-density regime, eliminating the possible mechanism by the trion localization effect due to the single-electron localization.

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Localization effects, energy relaxation, and electron and hole dispersion in selectively dopedn-typeAlyGa<

Cited by 18 publications

References 21 publications

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects

Electrical spin‐injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas

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