Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination

Ohno, Yutaka

doi:10.1007/3-540-31915-8_109

Cited by 1 publication

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“…The dislocations absorb the light with photon energy of 2.67 eV via their dislocation band 15, and this energy is somewhat larger than the estimated energy. Moreover, the velocity for the dislocation glide is independent of the polarization of illuminating light 16, even though the photo‐absorption due to the dislocation band is expected to be polarized along the Burgers vector 17. These results suggest that point defect complexes involving dislocations such as soliton defects 18 and kinks, rather than dislocation cores, are the candidates for the origin of the defect level.…”

Section: Introductionmentioning

confidence: 97%

In situ analysis of optoelectronic properties of dislocations in ZnO in TEM observations

Ohno

Taishi

Yonenaga

2009

Physica Status Solidi (a)

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Extended defects acting as non‐radiative recombination center or those acting as radiative one were, respectively, studied by transmission electron microscopy under the illumination of a monochromatic light or cathodoluminescence spectroscopy combined with light illumination. By means of this method, defect levels associated with dislocations in ZnO, which were introduced at elevated temperatures above 923 K, were determined. It was proposed that (i) a screw dislocation, presumably acting as non‐radiative recombination center, glides under the illumination of a light with photon energy above 2.48–2.61 eV, due to an electron–hole recombination at a defect level of 2.48–2.61 eV depth, and (ii) a mixed dislocation acts as radiative recombination center with a defect level of 3.1 eV depth.

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