Localized Pressure‐Induced Ferroelectric Pattern Arrays of Semicrystalline Poly(vinylidene fluoride) by Microimprinting

Kang, Seok Ju; Park, Youn Jung; Hwang, Ji-Young; Jeong, Hee June; Lee, Jong Soon; Kim, Kap Jin; Kim, Ho Cheol; Huh, June; Park, Cheolmin

doi:10.1002/adma.200601474

Cited by 103 publications

(59 citation statements)

References 31 publications

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“…Therefore, alternative patterning technologies are being investigated. For instance P(VDF-TrFE) films have been patterned by ink jet printing, 2,3 photo-crosslinking upon adding a bisazide photoinitiator, 4 microimprinting, 5,6 nanoimprint lithography 7 and nano-embossing. 8,9 A review on patterned piezo-, pyro-and ferroelectric polymers has been reported in 2010.…”

Section: Introductionmentioning

confidence: 99%

“…12 The stamp is subsequently removed and the microstructures, in a pattern complimentary to that present in the stamp, are replicated on the surface. PVDF micropatterns have been fabricated both by microimprinting 5,6,13 and capillary micromolding. 13,14 The ferroelectric and piezoelectric properties have been reported to depend on the length scale.…”

Section: Introductionmentioning

confidence: 99%

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Microstructured organic ferroelectric thin film capacitors by solution micromolding

Lenz

Zhao

Richardson

et al. 2015

Physica Status Solidi (a)

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Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDF-TrFE)) interdigitated with the electrically insulating polymer polyvinyl alcohol (PVA). Micrometer size line gratings of both polymers were fabricated over large area by solution micromolding, a soft lithography method. The binary linear arrays were realized by backfilling with the second polymer. We investigated in detail the device physics. The electrical equivalent circuit is a linear capacitor of PVA in parallel with a ferroelectric capacitor of P(VDFTrFE). The binary arrays are electrically characterized by both conventional Sawyer-Tower and shunt measurements. The dependence of the remanent polarization on the array topography is explained by numerical simulation of the electric field distribution.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Lenz

Zhao

Richardson

et al. 2015

Physica Status Solidi (a)

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“…15,22 Transition mechanisms resulting in γ phase are crystallization at high temperature or applying high shear on molten polymer, long-term annealing at high temperature or polling at low electric field from R phase, and low rate evaporation from high temperature polymer solutions. 16,20,21,23 Although, γ phase has lower polarity when compared to β phase, its piezoelectric coefficient still stands better than those of other polymers. 17,20 Besides, the higher Curie temperature of γ phase makes it less vulnerable to harsh environmental conditions.…”

mentioning

confidence: 99%

Spontaneous High Piezoelectricity in Poly(vinylidene fluoride) Nanoribbons Produced by Iterative Thermal Size Reduction Technique

et al. 2014

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We produced kilometer-long, endlessly parallel, spontaneously piezoelectric and thermally stable poly(vinylidene fluoride) (PVDF) micro- and nanoribbons using iterative size reduction technique based on thermal fiber drawing. Because of high stress and temperature used in thermal drawing process, we obtained spontaneously polar γ phase PVDF micro- and nanoribbons without electrical poling process. On the basis of X-ray diffraction (XRD) analysis, we observed that PVDF micro- and nanoribbons are thermally stable and conserve the polar γ phase even after being exposed to heat treatment above the melting point of PVDF. Phase transition mechanism is investigated and explained using ab initio calculations. We measured an average effective piezoelectric constant as -58.5 pm/V from a single PVDF nanoribbon using a piezo evaluation system along with an atomic force microscope. PVDF nanoribbons are promising structures for constructing devices such as highly efficient energy generators, large area pressure sensors, artificial muscle and skin, due to the unique geometry and extended lengths, high polar phase content, high thermal stability and high piezoelectric coefficient. We demonstrated two proof of principle devices for energy harvesting and sensing applications with a 60 V open circuit peak voltage and 10 μA peak short-circuit current output. (Figure Presented). © 2014 American Chemical Society

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“…From the industrial point of view, spin coating is one of the most desirable methods for large area uniform film formation and thus provides a great benefit when it is incorporated in fabricating PVDF based devices. Our recent work has also shown PVDF thin films with polar γ crystals prepared by pressurizing spin cast thin films at certain temperature range [56]. It is still challenging to conveniently prepare uniform ferroelectric PVDF thin film with β crystals whose permanent polarization can switch at low voltage with high temperature stability.…”

Section: Challenges For Materials Design 1 Polymorphic Crystals Ofmentioning

confidence: 99%

“…We have recently demonstrated a micro-patterning technique that produces patterned arrays of isolated ferroelectric γ type domains embedded into non-polar α structure in thin PVDF films [56]. The method is based on using micro-imprinting of a spin cast α type PVDF film.…”

Section: Patterning Of Ferroelectric Polymersmentioning

confidence: 99%

Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

Park¹,

Jeong²,

Chang³

et al. 2008

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metalferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

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Localized Pressure‐Induced Ferroelectric Pattern Arrays of Semicrystalline Poly(vinylidene fluoride) by Microimprinting

Cited by 103 publications

References 31 publications

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Spontaneous High Piezoelectricity in Poly(vinylidene fluoride) Nanoribbons Produced by Iterative Thermal Size Reduction Technique

Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

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