2011
DOI: 10.1021/nl200187v
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Locally Oxidized Silicon Surface-Plasmon Schottky Detector for Telecom Regime

Abstract: We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Ad… Show more

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Cited by 308 publications
(271 citation statements)
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“…In contrast, under the reverse-bias condition, the current saturates rapidly with the increased applied voltage, reaching a value of around 250 nA. This dark current value is one order of magnitude larger than that reported in the literature 14 , which we attribute to the larger contact interface area used in the present structure. The generation of the photocurrent includes the following processes.…”
contrasting
confidence: 59%
“…In contrast, under the reverse-bias condition, the current saturates rapidly with the increased applied voltage, reaching a value of around 250 nA. This dark current value is one order of magnitude larger than that reported in the literature 14 , which we attribute to the larger contact interface area used in the present structure. The generation of the photocurrent includes the following processes.…”
contrasting
confidence: 59%
“…Hot electrons have also played a role in realizing on-chip photodetectors based on silicon with several demonstrations [45,85,87,[118][119][120][121][122][123] over the past several years. Despite the success of using silicon photonics for controlling light emission, propagation, and modulation, the use of silicon as an active absorbing material in the telecommunication band is challenging due its transparency in this regime.…”
Section: On-chip Photodetectorsmentioning
confidence: 99%
“…Internal responsivity of 0.38 and 1.04 mA/W were measured at a wavelength of 1280 nm [120] for gold and aluminum stripes on n-type silicon, respectively. A silicon waveguide-based SPP Schottky photodetector operating at telecom wavelengths has also been developed [45] (Figure 4B). The device was fabricated using a self-aligned approach of local oxidation of silicon (LOCOS) on a silicon on insulator substrate ( Figure 4B).…”
Section: On-chip Photodetectorsmentioning
confidence: 99%
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“…In addition, due to the high throughput and low energy requirements, a novel application of plasmonics in chemical reactions gains significant attention, as reported in works on dissociation of hydrogen15, 16 and water,17, 18 photochemical19, 20, 21, 22, 23 and plasmon‐driven chemical reactions,24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37 etc. SPs excited on the surface of gold or silver can non‐radiatively decay into so‐called hot electrons with a high energy between the Fermi and vacuum energy level 36, 37, 38, 39, 40. The hot electrons could scatter into the absorbed molecule's excited state and then trigger chemical reactions by reducing the activation energy, so‐called plasmonic catalysis 41.…”
Section: Introductionmentioning
confidence: 99%