Logic Gate Functions Built with Nonvolatile Resistive Switching and Thermoresponsive Memory Based on Biologic Proteins

Abstract

Logic gate functions built with nonvolatile resistive switching and thermoresponsive memory based on biologic proteins were investigated. The “NAND” and “NOR” functions of logic gates in soya protein devices have been built at room temperature by their nonvolatile ternary WORM resistive switching behaviors. Furthermore, heating the devices from room temperature to 358 K results in a switch from tristable state to bistable state WORM resistive switching behavior, indicating that the thermoresponsiveness can be efficiently memorized. The biologic transient nonvolatile memory device consisting of soya protein is illustrated. This device exhibits a long data retention time (104 s) and significant HRS/LRS ratio (∼105); the transient response of the current to voltage of an as-fabricated device is also explored. The soya protein based memory device on a gelatin film substrate is also assessed to validate the feasibility of degradation and biological compatibility for the implantable biological electronic device, that is, innoxious and avirulent to the human body. This can offer alternative avenues for exploring prospective bioelectronic devices.

Recent Progress of Protein‐Based Data Storage and Neuromorphic Devices

“…Sun's group reported a thermoresponsive memory based on soya proteins. [ 90 ] The as‐fabricated device exhibited tristable states “WORM times” characteristic at room temperature and switched to the binary WORM memory mode when heated to 358 K (Figure 6d). At room temperature, two −1.6 V pulse signals with 2 ms width are needed to set the output current below 10 −7 A (defined as “0”), but only one or no input signal would result in output current higher than 10 −7 A (defined as “1”), which realized the function of “NAND” logic gate.…”

“…Some proteins such as silk fibroin (SF), ferritin, keratin, and collagen have been developed as data storage memory devices and neuromorphic devices. [ 59–103 ]…”

Optoelectrical Switching of Nonfullerene Acceptor Y6 and BPQD‐Based Bulk Heterojunction Memory Device through Photoelectric Effect

“…Zhang et al. [ 26 ] were the first to report the nonvolatile memory [ 27–32 ] performance of the BPQDs:polyvinylpyrrolidone (PVP)‐based electronic device, with an ON/OFF current ratio of 10 4 , a switching‐on voltage of −1.2 V, and a switching‐off voltage of 2.8 V. The switching bias window (Δ| V ON – V OFF |) reached up to 4.0. In our pioneering work, [ 21 ] we also fabricated the polymer PFCz‐NH 2 :BPDQs (weight ratio: 1:1) blends‐based memory device that exhibits a similar rewritable memory as that of the BPQDs:PVP blends, with an ON/OFF current ratio exceeding 10 3 , a switching‐on voltage of −2.53 V, a switching‐off voltage of 2.94 V, and a big switching bias window (Δ| V ON – V OFF | = 5.47).…”

Incorporating a redox active entity to attain electrical bistability in a polymer semiconductor

“…[8][9][10] For example, HDDs drain battery life; and, although NAND (NOTAND) flash memory may offer nonvolatility, it suffers from slow writing speeds and a limited number of rewritable cycles. [11][12][13][14][15] Today's most promising alternative non-volatile memory technology is Resistive Memory, more precisely, Resistive Random-Access Memory (ReRAM), which is expected to inherit the market for NAND flash. [16][17][18][19][20] These resistor-type memory devices offer simplicity in fabrication and allow the possibility for high data storage density via twodimensional, or even three-dimensional crossbar arrays.…”