Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time

Shih, Yu-Jen; Lee, Chia-Fu; Chang, Yu-Hao; Lee, Po-Hao; Lin, Hon-Jarn; Chen, Yulin; Lin, Ku-Feng; Yeh, Ta‐Chuan; Yu, Hung-Chang; Chuang, Harry; Chih, Yu-Der; Chang, Jonathan

doi:10.1109/vlsic.2018.8502260

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Mram Commercialization1

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Cited by 12 publications

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“…Later on, most of semiconductor companies across the globe recruited their own STT-MRAM teams focusing on STT-MRAM R&D. The momentum in pursuit of STT-MRAM technology as a future memory is greater than ever before. With a number of test chips demonstrated in the past decade [92,109,110,[165][166][167][168](see Figure 3.24), STT-MRAM R&D reached a peak in 2019. In this year, Everspin launched a game-changing 1 Gb standalone STT-MRAM product with DDR4 interface, targeting the replacement of DRAM in some applications such as enterprise SSDs [28].…”

Section: Mram Commercializationmentioning

confidence: 99%