Long catalyst-free InAs nanowires grown on silicon by HVPE

Grégoire, Gabin; Gil, Evelyne; Zeghouane, Mohammed; Bougerol, Catherine; Hijazi, Hadi; Castelluci, Dominique; Dubrovskiı̆, V. G.; Trassoudaine, Agnès; Goktas, Nebile Isik; LaPierre, Ray; André, Yves-Bernard

doi:10.1039/d0ce01385d

Cited by 4 publications

(17 citation statements)

References 37 publications

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“…This was supported by Bechstedt and Belabbes who estimated the band gap energy for different polytypes (0.411, 0.431, 0.440, and 0.481 eV for the 3C, 6H, 4H, and 2H polytypes, respectively). The presence of both cubic and hexagonal phases has already been observed in InAs NW grown by HVPE . The PL peak emission a 2 observed at 0.418 eV is probably due to the contribution of the ZB phase of InAs, confirming the presence of both WZ and ZB phases in InAs NWs grown by SAG-HVPE.…”

Section: Resultssupporting

confidence: 55%

“…The growth of the top (111)B facet is mainly limited by the supersaturation of the vapor phase, that is, by the gaseous material input with respect to the equilibrium of the deposition reaction, and by the dechlorination of the adsorbed InCl. It is shown in ref that the axial growth rate first increases by increasing the InCl partial pressure which results in higher supersaturation. When the InCl partial pressure becomes too high, the surface starts to be blocked by undecomposed AsInCl molecules and the growth rate reaches a plateau.…”

Section: Resultsmentioning

confidence: 97%

“…The growth process is generally described by the adsorption of InCl molecules on the As-terminated surface, leading to the formation of an AsInCl molecule. This step is followed by the dechlorination of AsInCl to produce the InAs crystal . The As-terminated (111)B surface of the GaAs(111)B substrate ensures the nucleation and then the growth of perfectly aligned NWs along the (111)B direction, regardless of the growth conditions.…”

Section: Resultsmentioning

confidence: 99%

“…This step is followed by the dechlorination of AsInCl to produce the InAs crystal. 13 The As-terminated (111)B surface of the GaAs(111) B substrate ensures the nucleation and then the growth of perfectly aligned NWs along the (111)B direction, regardless of the growth conditions. NW growth was observed on GaAs(111)B after InCl exposure, while no growth was observed on the patterned Si(111) substrate after the same pre-treatment.…”

Section: Resultsmentioning

confidence: 99%

“…We have recently reported the HVPE growth of InAs NWs on silicon substrates with high growth rates . However, random nucleation due to the reoxidation of the substrate made it difficult to control the NW morphology.…”

Section: Introductionmentioning

confidence: 99%

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Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Grégoire

Zeghouane

Goosney

et al. 2021

Crystal Growth & Design

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We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor−solid method. Well-ordered InAs NWs were grown on GaAs(111)B and Si(111) substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). Vertical and high aspect ratio InAs NWs with a hexagonal shape were grown on both GaAs and Si substrates. The impact of the growth conditions on the InAs morphology was investigated. The final shape of the InAs crystal was tuned from a NW to a nanoplatelet by controlling growth conditions such as growth temperature, vapor phase composition, and mask pattern. The influence of the aperture size on the nucleation density and then on the morphology of InAs is discussed. Small openings resulted in the formation of a single nucleus per hole, which was then converted to a NW. For larger apertures, the number of nuclei increased, leading to both three-dimensional crystals and NWs. The effect of growth temperature and the III/V ratio on the kinetics and thermodynamics of InAs growth is also discussed. The growth was first optimized on a GaAs(111)B substrate and then performed on Si, which is more suitable to develop devices. Finally, the absorbance and photoluminescence measurements were carried out on the InAs NW arrays, demonstrating the high potential of HVPE-grown InAs NWs for future multispectral photo-detection devices.

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Section: Resultssupporting

confidence: 55%

Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Grégoire

Zeghouane

Goosney

et al. 2021

Crystal Growth & Design

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Low‐Temperature Growth of Au‐Catalyzed InAs Nanowires: Experiment and Theory

Dubrovskiı̆

Reznik

Ilkiv

et al. 2021

Physica Rapid Research Ltrs

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Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au‐catalyzed molecular beam epitaxy on Si substrates at a low surface temperature of 270 °C are presented. These NWs exhibit pure wurtzite crystal structure and an unusually high ratio of the average NW length over the effective thickness of deposited InAs of about 60 despite the presence of parasitic InAs islands on the Si substrate. These trends are explained within a dedicated growth model. In the absence of In evaporation, In atoms either diffuse from the substrate to the NW tips or remain in the parasitic layer. This leads to a linear time dependence of the NW length and other unusual growth properties that are thought to have not previously been accessed.

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High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation

et al. 2023

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InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of metal-assisted InAs nanowires on Si substrates is often random. Here, we develop a new approach to grow vertically aligned InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag as catalysts. The vertically aligned one-dimensional InAs nanowires are grown on the parasitic two-dimensional InAs film on the Si substrates by using the Ag nanoparticles segregated from Ag-In alloy catalysts. The diameters of the vertically aligned InAs nanowires obtained by this method are mainly distributed between 20 and 50 nm. Detailed transmission electron microscope data show that the nanowires with thinner diameters tend to have less stacking faults and twin defects and high crystal quality pure wurtzite nanowires can be obtained. Using these vertically aligned InAs nanowires as the channel material of field effect transistors, we have obtained a field-effect mobility of ~ 2800 cm2 V-1s-1 and an Ion/Ioff ratio of ~104 at room temperature. Our work provides a new method for the controlled growth of high-quality vertically aligned InAs nanowires on Si substrates.

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Long catalyst-free InAs nanowires grown on silicon by HVPE

Abstract: We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.

Cited by 4 publications

References 37 publications

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Low‐Temperature Growth of Au‐Catalyzed InAs Nanowires: Experiment and Theory

High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation

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