Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Grégoire, Gabin; Zeghouane, Mohammed; Goosney, Curtis; Goktas, Nebile Isik; Staudinger, Philipp; Schmid, Heinz; Moselund, Kirsten E.; Taliercio, Thierry; Tournié, E.; Trassoudaine, Agnès; Gil, Evelyne; LaPierre, Ray; André, Yves-Bernard

doi:10.1021/acs.cgd.1c00518

Cited by 6 publications

(8 citation statements)

References 27 publications

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“…Their results also indicated that by placing wires in large arrays, it is possible to stop the <1-10> growth rate completely in favor of the <111> growth rate. Recently, Grégoire et al [ 162 ] report that the vertical and high aspect ratio InAs NWs with a hexagonal shape were grown on both GaAs (111)B and Si(111) patterned substrates by selective epitaxial growth (SEG). The morphology and the quality of InAs NWs’ arrays grown on GaAs(111)B and Si(111) were characterized by SEM and photoluminescence measurements in Figure 36 a–d, respectively.…”

Section: Latest Approach Of Heteroepitaxy Of Si-based Iii-v Group Mat...mentioning

confidence: 99%

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Wang

et al. 2022

Nanomaterials

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Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized

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Section: Latest Approach Of Heteroepitaxy Of Si-based Iii-v Group Mat...mentioning

confidence: 99%

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Wang

et al. 2022

Nanomaterials

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“…Using III-chloride and V-hydride precursors, HVPE has been proven to be a powerful tool to grow III-V materials. Thanks to the low sticking coefficient of the III-chloride precursors on dielectric masks [21], SAG with high selectivity has successfully used to grow binary GaAs and InAs on both GaAs (111)B and Si (111) substrates [22][23][24]. Here, we study the features of SAG of InGaAs NWs using SiO x patterned GaAs (111)B substrate by HVPE.…”

Section: Introductionmentioning

confidence: 99%

Long indium-rich InGaAs nanowires by SAG-HVPE

Chereau,

Grégoire,

Avit

et al. 2024

Nanotechnology

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We demonstrate the selective area growth (SAG) of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μm/h and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy (EDS) giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence (PL) spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite (ZB/WZ) polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.

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“…This technique has demonstrated exceptional results for the Au-assisted growth of ultra-thin (10 nm diameter), pure zincblende (ZB) GaAs NWs with a record growth rate . While SAG by HVPE has been successfully used to grow InAs NWs and III-nitride nanorods, − no such in-depth study of SAG of GaAs NW arrays has been achieved by this technique. Consequently, here we study the features of SAG of GaAs NWs using SiN x and SiO x -patterned GaAs (111)B substrates by HVPE.…”

Section: Introductionmentioning

confidence: 99%

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

Chereau

Dubrovskiı̆

Grégoire

et al. 2023

Crystal Growth & Design

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We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiN x or SiO x mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.

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Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Cited by 6 publications

References 27 publications

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Long indium-rich InGaAs nanowires by SAG-HVPE

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

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