Pulse laser deposition was used to obtain nanocrystalline red-emitting Y 2 O 3 :Eu 3? thin-film phosphors. X-ray diffraction measurements show that the un-annealed thin film was amorphous, while those annealed were crystalline. At lower annealing temperature of 600-700°C, cubic bixbyite Y 2 O 3 :Eu 3? was formed. As the annealing temperatures were increased to 800°C, hexagonal phase emerged. The average crystallite size of the film was 64 nm. Photoluminescence measurement indicates intense red emission around 612 nm due to the 5 D 0 ? 7 F 2 transition. Scanning electron microscopy indicated that agglomerates of noncrystalline particles with spherical shapes were present for the un-annealed films. After annealing at high temperature, finer morphology was revealed. Atomic force microscopy further confirmed the formation of new morphology at the higher annealing temperatures. UV-Vis measurement indicated a band gap in the range of 4.6-4.8 eV. It was concluded that the annealing temperature played an important role in the luminescence intensity and crystallinity of these films.