The
emergence of lead-free metal-halide perovskites in modern-day
energy research is primarily due to their competent semiconducting
and optoelectronic properties, as well as their nontoxicity and improved
stability in ambient operating conditions. However, a detailed understanding
of ion transport dynamics and the relaxation behavior of these materials
is still elusive. In this article, we report on the single-crystal
(SC) growth of a bimetallic two-dimensional layered Rb4Ag2BiBr9 and explore its dielectric, piezoelectric,
and ferroelectric properties. The dielectric attributes are investigated
by studying the temperature-dependent complex impedance, complex electric
modulus, and AC conductivity over an extensive frequency range from
4 Hz to 8 MHz. The role of grain and grain boundaries in the effective
impedance is established using the Maxwell–Wagner equivalent
circuit model from the Nyquist plots. The observed electric modulus
spectra are studied using the Havriliak–Nigami and the Kohlrausch–Williams–Watts
formalisms to understand the ionic transport and relaxation mechanisms
in Rb4Ag2BiBr9. The DC conductivity
and relaxation time show Arrhenius-like behavior with the inverse
temperature validating the hopping motion of ions. The values of the
activation energy required for ion hopping are calculated independently
from the relaxation time, hopping frequency, and DC conductivity Arrhenius
plots and are in good agreement with a value of 0.47 eV. The scaling
of the temperature-dependent conductivity and electric modulus spectra
into a single master curve demonstrates the congruence of the ionic
conduction and the relaxation phenomena at different temperatures
for Rb4Ag2BiBr9. This SC demonstrates
decent thermal and ambient stability up to 500 °C and 12 months,
respectively. The pristine orthorhombic Rb4Ag2BiBr9 SC shows a piezoelectric amplitude value of ∼564
pm at the maximum applied bias (±10 V), and a saturation polarization
of ∼0.14 nC/cm2 estimated from the piezoelectric
force microscopy and polarization hysteresis loop measurement, respectively.
The ferroelectric and semiconducting attributes of this material can
be harnessed for prospective applications as a thin film in designing
mechanical energy harvesters as well as functional photoferroelectrics,
such as optical switches and ferroelectric photovoltaics.