1981
DOI: 10.1109/t-ed.1981.20439
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Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

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Cited by 67 publications
(22 citation statements)
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“…In the general case, nonuniform structure does not need an "excitation" event 69 agreement with both the experimental (Fig. 3.7) and the analytical (3.13) results.…”
Section: Local Defect and Inhomogeneity Impactsupporting
confidence: 84%
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“…In the general case, nonuniform structure does not need an "excitation" event 69 agreement with both the experimental (Fig. 3.7) and the analytical (3.13) results.…”
Section: Local Defect and Inhomogeneity Impactsupporting
confidence: 84%
“…However, under certain conditions (particularly at high R T ) thermal breakdown can occur too [69][70][71][72] due to high overheating in on-state operation. In power transistors with good thermal resistance, the thermal generation of electron-hole pairs is low.…”
Section: Thermal Breakdown In Gaas Mesfetsmentioning
confidence: 99%
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“…The device has met with limited success as a power device, largely due to irreproducible high gate-drain breakdown voltages [1] and "power slump" phenomena [2]. Both of these effects have been attributed to the presence of surface states [2,3] which change the potential between gate-drain and gate-source electrodes. Although a variety of wet and gas-phase passivation treatments have been proposed and demonstrated, the results of such treatments have generally been short-lived and difficult to reproduce [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…antisite defects, with characteristic energies situated mid-bandgap. The antisite defects are likely to be responsible for the degradation of pHEMT devices [3]. Since the hydrogen should desorb from the material with the excess As, effective passivation should not require that the hydrogen remains 401 Mat.…”
Section: Introductionmentioning
confidence: 99%