Long term instability in the defect assembly in irradiated high resistivity silicon detectors

Eremin, V; Ivanov, A; Verbitskaya, E.; Li, Z; Schmidt, B

doi:10.2172/390406

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“…The study of the causes of the observed phenomena was carried out independently by analyzing the additional behavior of the dependence of the current density on the reverse -bias voltage at temperatures T = 300 K on the basis of the Fowler -Nordheim field emission model. This model describes quite well the behavior of this dependence in the presence of irregularities in the area of p -n transitions [6].…”

Section: Results and Their Discussionsupporting

confidence: 52%

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Gaibov

Vakhobov

Ibragimova

et al. 2022

MSF

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The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

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Section: Results and Their Discussionsupporting

confidence: 52%