Long-Term Operational Stability of Ta/Pt Thin-Film Microheaters: Impact of the Ta Adhesion Layer

Калинин, И.А.; Roslyakov, Ilya V.; Хмеленин, Д. Н.; Napolskii, K. S.

doi:10.3390/nano13010094

Cited by 6 publications

(3 citation statements)

References 69 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the key problems related to the production of such structures is their adhesion to the substrate [ 22 , 23 ]. The impact of the thermal stability of the substrate and buffer layer on the quality of the thin layers is highlighted by, among others, a group dealing with thin films for wearable energy harvesting [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

“…Physical PVD deposition is a popular technique used in the electronics, optical, semiconductor, and medical industries to produce thin films with a high quality and accuracy. An improvement in the electrical properties of the produced structures can be obtained by modifying the surface upon which they are created with a laser beam [21] One of the key problems related to the production of such structures is their adhesion to the substrate [22,23]. The impact of the thermal stability of the substrate and buffer layer on the quality of the thin layers is highlighted by, among others, a group dealing with thin films for wearable energy harvesting [24].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Influence of Buffer Layer Type on the Electrical Properties of Metallic Layers Deposited on Composite Textile Substrates in the PVD Process

Lebioda

Korzeniewska

2023

Materials

View full text Add to dashboard Cite

In the era of developing wearable electronics, the miniaturization of electronic systems and their implementation in the textile industry is one of the key issues. For this reason, it is important to select the appropriate textile substrates upon which it is possible to produce electroconductive structures, as well as their selection from the point of view of the electrical parameters’ stability. For this purpose, research related to the effect of heating a substrate on the resistance of the structures produced in the process of physical vacuum planting was conducted. Textile composites with a buffer layer made of polyurethane, Teflon, and acrylic were used as substrates in the tests. Such layers are an integral part of textile composites and a necessary element for producing structures with continuous electrical conductivity. The conducted tests showed that a buffer layer made of polyurethane (thermal conductivity, e.g., PERMACOL 5450 resin 0.16 W/mK) heated to 15 °C above room temperature was a layer that introduced changes into the surface resistance of the structures. The resistance values of the samples produced on a substrate containing a buffer layer of polyurethane varied in the range of 9–23%, depending on the manufacturer of the composite in the case of a self-heating mode, and in the case of an external heating mode, these changes were smaller and ranged from 8 to 16%. Such a phenomenon occurred regardless of the type of applied metal, and this was not observed in the case of composites with a Teflon or acrylic sublayer. For this reason, it is necessary to take into account the fact that textronic structures made on substrates containing a polyurethane layer may change the surface resistance depending on the temperature. The electrical parameters of such structures were checked by heating the structure using an external heater and self-heating mechanism. The same phenomenon was observed in both cases.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Influence of Buffer Layer Type on the Electrical Properties of Metallic Layers Deposited on Composite Textile Substrates in the PVD Process

Lebioda

Korzeniewska

2023

Materials

View full text Add to dashboard Cite

show abstract

“…Several approaches have been proposed for the mitigation of delamination and recrystallization of noble metal thin films at high temperatures: (1) the deposition of bilayer structures with an adhesion layer (Ti, Ta, Cr, Zr) between the substrate and the conductive layer [17][18][19][20][21][22][23][24] or the use of an oxidizing atmosphere during the initial stage of the noble metal sputtering [25,26], (2) the sputtering of a protective dielectric layer (Si, Al 2 O 3 , Si 3 N 4 , TiO 2 , SiAlON, SiO 2 + Si 3 N 4 ) onto the top surface of metal layer [16,24,[27][28][29][30], (3) alloying platinum with metals that have higher melting point (Ir, Rh) [24,[31][32][33][34], and (4) the incorporation of refractory oxides (ZrO 2 , HfO 2 , Nb 2 O 3 , Y 2 O 3 , RuO 2 ), acting as anchors to stabilize the grain boundaries of the metal phase [24,33,[35][36][37][38]. All these approaches require recrystallization annealing at temperatures exceeding the operating temperature range of thin-film devices [17,39].…”

Section: Introductionmentioning

confidence: 99%

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Pleshakov,

Kalinin,

Ivanov

et al. 2023

Micromachines

Self Cite

View full text Add to dashboard Cite

Platinum-based thin films are widely used to create microelectronic devices operating at temperatures above 500 °C. One of the most effective ways to increase the high-temperature stability of platinum-based films involves incorporating refractory metal oxides (e.g., ZrO2, HfO2). In such structures, refractory oxide is located along the metal grain boundaries and hinders the mobility of Pt atoms. However, the effect of annealing conditions on the morphology and functional properties of such multiphase systems is rarely studied. Here, we show that the two-step annealing of 250-nm-thick Pt-Rh/Zr multilayer films instead of the widely used isothermal annealing leads to a more uniform film morphology without voids and hillocks. The composition and morphology of as-deposited and annealed films were investigated using X-ray diffraction and scanning electron microscopy, combined with energy-dispersive X-ray spectroscopy. At the first annealing step at 450 °C, zirconium oxidation was observed. The second high-temperature annealing at 800–1000 °C resulted in the recrystallization of the Pt-Rh alloy. In comparison to the one-step annealing of Pt-Rh and Pt-Rh/Zr films, after two-step annealing, the metal phase in the Pt-Rh/Zr films has a smaller grain size and a less pronounced texture in the <111> direction, manifesting enhanced high-temperature stability. After two-step annealing at 450/900 °C, the Pt-Rh/Zr thin film possessed a grain size of 60 ± 27 nm and a resistivity of 17 × 10−6 Ω·m. The proposed annealing protocol can be used to create thin-film MEMS devices for operation at elevated temperatures, e.g., microheater-based gas sensors.

show abstract

Exploring Platinum Thin Films as Electrodes for High‐Temperature and ‐Pressure Electrochemical Studies in Aqueous Systems

Abdulaziz,

Petruk,

George

et al. 2024

Electrochemical Science Adv

View full text Add to dashboard Cite

This work reports a methodology for the fabrication of Pt thin‐film electrodes for electrochemical studies in hydrothermal systems. The research process was meticulous, with particular attention paid to the multilayer Ti/Pt/Ti/Al2O3 film structure and annealing conditions that are expected to impact the morphology of the films, surface composition and electrochemical response. The findings of this study are significant, as they provide valuable insights into the behaviour of Pt thin‐film electrodes in various media and conditions. Two different approaches were adopted for the preparation of the electrodes: in one case, the Ti/Pt/Ti/Al2O3 films deposited on sapphire wafers were exposed to rapid thermal annealing at 900°C under argon for 5 min, followed by argon ion milling to etch the final electrode pattern (Pt‐RA(900)), while in the other case, uncapped Pt films were annealed, after etching, in a tubular oven under argon at specific temperatures between 200°C and 900°C (Pt‐TO). Rapid annealing at 900°C on capped films resulted in the formation of a Pt3Ti intermetallic alloy with remarkable mechanical and chemical stability even after 10 h of immersion in deionised water, acid (0.1 M H2SO4) and alkaline media (0.1 M KOH) conditions at temperatures up to 150°C, despite the dissolution of the Al2O3 top layer at 150°C and long immersion times (> 10 h). In the case of uncapped Pt films, diffusion and oxidation of Ti through the Pt film at high temperature resulted in the formation of TiO2 on the surface of Pt. The results were confirmed by using a comprehensive suite of ex‐situ characterisation techniques to follow changes in the Pt electrode surface morphology and composition before and after immersion in H2O, 0.1 M H2SO4 and 0.1 M KOH solutions under argon. Ex‐situ electrochemical characterisation studies were also conducted to correlate the changes in the electrode surface properties, including the electrochemical surface area, with different annealing conditions and after various hydrothermal treatments in neutral, alkaline and acidic media.

show abstract

Long-Term Operational Stability of Ta/Pt Thin-Film Microheaters: Impact of the Ta Adhesion Layer

Cited by 6 publications

References 69 publications

The Influence of Buffer Layer Type on the Electrical Properties of Metallic Layers Deposited on Composite Textile Substrates in the PVD Process

The Influence of Buffer Layer Type on the Electrical Properties of Metallic Layers Deposited on Composite Textile Substrates in the PVD Process

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Exploring Platinum Thin Films as Electrodes for High‐Temperature and ‐Pressure Electrochemical Studies in Aqueous Systems

Contact Info

Product

Resources

About