Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices

Ghosh, Kankat; Das, Sudipta; Fissel, A.; Osten, H. J.; Laha, Apurba

doi:10.1109/ted.2016.2566681

Cited by 5 publications

(2 citation statements)

References 37 publications

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“…Therefore, hybrid high‐k materials based on Nd 2 O 3 have been recently explored and shown promising potential as gate dielectric . On the other hand, niobium oxide (Nb 2 O 5 ) has a higher dielectric constant (≈29) than Nd 2 O 3 (≈20) . However, it has smaller band gap (≈4.4 eV) and suffers from a high density of defects/traps .…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

Tang

Han

et al. 2018

Physica Status Solidi (a)

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Pentacene organic thin-film transistors (OTFTs) using high-k Nd x Nb (1Àx) O gate dielectric with different Nb contents (x ¼ 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x ¼ 0.950, achieving a high carrier mobility of 1.95 cm 2 V À1 s À1 , small threshold voltage of À1.57 V, small sub-threshold swing of 0.13 V dec À1 , and small hysteresis of 0.13 V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd 2 O 3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.

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Section: Introductionmentioning

confidence: 99%

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

Tang

Han

et al. 2018

Physica Status Solidi (a)

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“…[10] Hybrid high-k dielectrics based on lanthanide elements like lanthanum (La) and neodymium (Nd) have been recently explored because both elements can passivate the carrier traps in the dielectrics. [11,12] Although both La and Nd oxides have high hygroscopicity, the latter is used in this work due to lower hygroscopicity and lower cost than the former. [13,14] Besides high dielectric constant (21), Nd oxide has low trap density and large bandgap (>5.0 eV).…”

Section: Introductionmentioning

confidence: 99%

Nd_xHf_(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors

Xiao

Wang

Chen

et al. 2023

Physica Rapid Research Ltrs

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NdON, HfON, and their mixtures (NdxHf(1−x)ON) with different Hf contents are adopted as the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance–voltage characteristics reveal that the Hf incorporation generates negative fixed charges in the dielectric for assisting the applied gate voltage, thus achieving a low threshold voltage for the OTFT. X‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) results indicate that Hf can suppress the hygroscopicity of Nd oxide while Nd can passivate the carrier traps (e.g., oxygen vacancies) of Hf oxide, both of which can contribute to a smoother dielectric surface for the growth of larger pentacene grains on the dielectric surface. As a result, among the samples with different Hf contents, the OTFT with Nd0.85Hf0.15ON can achieve the highest carrier mobility of 1.95 cm2 V−1 s−1 due to least Coulomb scattering (associated with lowest interface‐trap density of 5.9 × 1012 cm−2 eV−1 and smallest hysteresis of 0.26 V) and least grain‐boundary scattering (associated with largest pentacene grains).

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Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode

Huang

Lai

et al. 2022

Applied Surface Science

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Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices

Cited by 5 publications

References 37 publications

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

Nd_xHf_(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors

Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode

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Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices

Cited by 5 publications

References 37 publications

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors

Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode

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About

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd₂O₃ Gate Dielectric Doped with Nb

Nd_xHf_(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors