Long-term stability of InP MIS devices

Tardy, J.; Thomas, I.; Viktorovitch, Pierre; Gendry, M.; Perrossier, J.-L.; Santinelli, Cristina; Besland, Marie-Paule; Louis, P.; Post, G.

doi:10.1016/0169-4332(91)90203-v

Cited by 12 publications

(4 citation statements)

References 9 publications

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“…This shows the stability of the oxides and the uniform distribution of interface traps. 15 For the delay time of 1 s, there is a small drift in C-V curve toward negative side of the x-axis. The maximum drift is observed for pH 7 sample.…”

Section: C-v Characteristics Of Mos Structuresmentioning

confidence: 97%

Improved electrical properties on the anodic oxide/InP interface for MOS structures

Sumathi

Dharmarasu

Arulkumaran

et al. 1998

Journal of Elec Materi

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The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K 2 Cr 2 O 7 :H 2 O (BCA). Annealing at 250°C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In 2 O 3 , InPO 3 , and InPO 4 . MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 × 10 10 cm -2 eV -1 when compared to the substrates polished with bromine-methanol (8 × 10 10 cm -2 eV -1 ).

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Section: C-v Characteristics Of Mos Structuresmentioning

confidence: 97%

Improved electrical properties on the anodic oxide/InP interface for MOS structures

Sumathi

Dharmarasu

Arulkumaran

et al. 1998

Journal of Elec Materi

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show abstract

“…Several growth methods, such as thermal, 1 anodic, 2,3 and plasma 4,5 oxidation have been employed. Also, various techniques to deposit insulators in combination with growth [6][7][8][9] or deposition only 10 have been used. The main issue during growth or deposition of insulator material on InP is that it has to be performed at low temperature to avoid thermal degradation.…”

Section: Introductionmentioning

confidence: 99%

InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

Forsberg

Pasquariello

Camacho

et al. 2003

Journal of Elec Materi

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In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO 2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO 2 -Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.

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“…Among the III-V compounds, the smallest TIS was observed for InGaAs and InP. Small changes (about 8%) of drain current for InGaAs MISFETs [1] and of flat-band voltage for InP MIS structures [2] typically appeared as soon as an hour after the beginning of device operation.…”

Section: Introductionmentioning

confidence: 99%

“…That is why it is reasonable to analyse, along with the above-mentioned reasons, other causes associated with bulk properties of the insulator. Although some authors [2,8] believe that, to a first approximation, the bulk of the insulator exerts no influence on TIS, this statement is controversial.…”

Section: Introductionmentioning

confidence: 99%

Association of time instability of the InP - interface characteristics with bulk properties of the insulator

Berman¹,

Denisov²,

Gabaraeva³

et al. 1996

Semicond. Sci. Technol.

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A comparative study of InP and Si surfaces passivated by SiO 2 has been carried out in order to single out the effects associated with the structural peculiarities of the insulator. SiO 2 has been deposited on InP and Si simultaneously at low temperature. Moreover, different regimes for deposition of the insulator have been used. Values obtained for the time instability (TIS) of interface characteristics of Si-SiO 2 and InP-SiO 2 were in close agreement. Experimentally, the presence of distorted and ruptured Si-O bonds was found in the bulk of SiO 2 deposited by low-temperature techniques on both InP and Si, even though the refractive index (n) and permittivity (ε) of SiO 2 were virtually coincident with those for thermal SiO 2 . Small departures of SiO 2 from stoichiometry, which manifested themselves as small deviations (< 0.016) of n from the value for thermal SiO 2 , were accompanied by the appearance of a frequency dependence of ε as well as by an increase of several fold in TIS for both structures.

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Long-term stability of InP MIS devices

Cited by 12 publications

References 9 publications

Improved electrical properties on the anodic oxide/InP interface for MOS structures

Improved electrical properties on the anodic oxide/InP interface for MOS structures

InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

Association of time instability of the InP - interface characteristics with bulk properties of the insulator

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