Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Zhong, Yinghui; Wang, Wenbin; Sun, Shuxiang; Ding, Peng; Jin, Zhi

doi:10.1002/pssa.201700411

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…Figure 1 shows the schematic cross-section of InP-based HEMTs. The epitaxial structure with single Si-doping plane is almost consistent with previous device fabrication, [20,21] as shown in Fig. 1(a).…”

Section: Device Structure and Physical Modelsupporting

confidence: 87%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

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An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

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Section: Device Structure and Physical Modelsupporting

confidence: 87%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

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“…The detailed fabrication process has been described in our previous work. [20,21] Si To investigate the effect of proton radiation on the electrical characteristics of InP-based HEMT, the numerical simulation method has been used. [10] For devices with heterostructure, electrons can acquire very high energy and get into non-equilibrium transport condition, and therefore electron velocity can be much greater than their steady state value.…”

Section: Device Structure and Numerical Methodsmentioning

confidence: 99%

Effect of defects properties on InP-based high electron mobility transistors*

Sun

Chang

et al. 2019

Chinese Phys. B

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The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

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“…Figure 1b depicts a detailed vertical profile of a T-gate by scanning electron microscope (SEM). The detailed fabrication process has also been mentioned elsewhere in [22,23].…”

Section: Methodsmentioning

confidence: 99%

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

et al. 2019

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In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 1014 cm−2, 1 × 1015 cm−2, to 1 × 1016 cm−2. Both the channel current and transconductance dramatically decreased as the irradiation fluence rose up to 1 × 1016 cm−2, whereas the specific channel on-resistance (Ron) exhibited an apparent increasing trend. These changes could be responsible for the reduction of mobility in the channel by the irradiation-induced trap charges. However, the kink effect became weaker with the increase of the electron fluence. Additionally, the current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) demonstrated a slightly downward trend as the irradiation fluence rose up to 1 × 1016 cm−2. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance (CGD) and the ratio of gate-drain capacitance and gate-source capacitance (CGD/CGS). Moreover, the increase of Ron may be another important factor for fmax reduction.

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Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs

Cited by 6 publications

References 15 publications

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Effect of defects properties on InP-based high electron mobility transistors*

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

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